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Электронный компонент: S2386-44K

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Features
l High sensitivity
l Low dark current
l High reliability
l High linearity
Applications
l Analytical equipment
l Optical measurement equipment
P H O T O D I O D E
Si photodiode
For visible to IR, general-purpose photometry
S2386 series
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Package
Active
area size
Effective
active area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm
2
)
(V)
(C)
(C)
S2386-18K
/K
S2386-18L
/L
TO-18
1.1 1.1
1.2
S2386-5K
2.4 2.4
5.7
S2386-44K
3.6 3.6
13
S2386-45K
/K
TO-5
3.9 4.6
17.9
S2386-8K
/L
TO-8
5.8 5.8
33
30
-40 to +100
-55 to +125
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
Short circuit
current
Isc
100 lx
Dark
current
I
D
V
R
=10 mV
Max.
Temp.
coefficient
of I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
4
=10 mV
NEP
Type No.
(nm)
(nm)
p
GaP
LED
560 nm
He-Ne
laser
633 nm
GaAs
LED
930 nm
Min.
(A)
Typ.
(A)
(pA) (times/C)
(s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz
1/2
)
S2386-18K
1
1.3
S2386-18L
4
5.7
2
0.4
140
5 100 6.8 10
-16
S2386-5K
4.4
6.0
5
1.8
730
2 50 9.6 10
-16
S2386-44K
9.6
12
20
3.6
1600 0.5
S2386-45K
12
17
30
5.5
2300 0.3 25 1.4 10
-15
S2386-8K
320 to 1100 960
0.6 0.38 0.43 0.59
26
33
50
1.12
10
4300 0.2 10 2.1 10
-15
* Window material K: borosilicate glass, L: lens type borosilicate glass
Si photodiode
S2386 series
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 C)
s
s
s
s
s Spectral response
s
s
s
s
s Photo sensitivity temperature characteristic
KSPDB0110EA
-0.5
0
+0.5
+1.0
+1.5
200
400
600
800
1000
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT (
%
/

C)
(Typ.)
KSPDB0058EB
90
80
70
60
50
30
RELATIVE SENSITIVITY
40
90
80
70
60
50
30
40
20
10
0
10
20
80 %
100 %
20%
40 %
60 %
S2386-18K
S2386-18L
s Directivity
s Rise time vs. load resistance
KSPDB0111EA
LOAD RESISTANCE (
)
RISE TIME
(Typ. Ta=25 C, V
R
=0 V)
10 ns
100 ns
1 s
10 s
100 s
1 ms
10
2
10
3
10
4
10
5
S2386-18K
S2386-5K
S2386-44K
S2386-8K
S2386-45K
KSPDB0112EA
Si photodiode
S2386 series
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 C)
10 fA
100 fA
1 pA
10 pA
100 pA
1 nA
0.01
0.1
1
10
100
S2386-18K/-5K/-44K/-45K
S2386-8K
s
Dark current vs. reverse voltage
s
Shunt resistance vs. ambient temperature
KSPDB0113EA
KSPDB0114EA
AMBIENT TEMPERATURE (C)
SHUNT RESISTANCE
(Typ. V
R
=10 mV)
100 k
1 M
10 M
100 M
1 G
10 T
-20
0
20
40
60
S2386-5K
S2386-18K/-18L
S2386-45K
S2386-44K
80
10 G
100 G
1 T
Si photodiode
S2386 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KSPD1035E01
Mar. 2001 DN
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
15
5.0 0.2
1.8
0.45
LEAD
12.35 0.1
13.9 0.2
7.5 0.2
WINDOW
10.5 0.1
PHOTOSENSITIVE
SURFACE
MARK ( 1.4)
CONNECTED TO CASE
KSPDA0102EA
KSPDA0048EA
KSPDA0103EA
S2386-5K/-44K/-45K
S2386-8K
KSPDA0104EA
s Dimensional outlines (unit: mm)
S2386-18K
S2386-18L
14
2.3
3.55 0.2
4.7 0.1
5.4 0.2
2.54 0.2
CONNECTED TO CASE
WINDOW
3.0 0.2
0.45
LEAD
14
2.05 0.3
0.45
LEAD
4.7 0.1
5.4 0.2
2.54 0.2
CONNECTED TO CASE
2.3
3.55 0.2
20
4.1 0.2
2.8
0.45
LEAD
8.1 0.1
WINDOW
5.9 0.1
PHOTOSENSITIVE
SURFACE
9.1 0.2
5.08 0.2
CONNECTED TO CASE
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.