Features
l
S2506-02: Visible to infrared range
S2506-04: Visible-cut
S6786 : Visible to infrared range, high sensitivity,
high-speed response
S6967 : Visible to infrared range, high sensitivity,
high-speed response, large active area
S6967-01: Visible-cut, high sensitivity,
high-speed response, large active area
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Plastic package: 7 7.8 mm
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Active area size
S2506 series, S6786: 2.77 2.77 mm
S6967 series : 5.5 4.8 mm
Applications
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Spatial light transmission
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Optical switches
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Laser radar, etc.
P H O T O D I O D E
Si PIN photodiode
Plastic SIP (Single In-line Package)
S2506/S6967 series, S6786
S2506/S6967 series and S6786 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP (Single In-line
Package) for detecting visible to infrared range or infrared range only. These Si PIN photodiodes feature high sensitivity, large active areas and
high-speed response, allowing you to choose the optimum type that best matches your application.
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective active
area
Reverse
voltage
V
R
Max.
Power
dissipation
P
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline
Package
(mm)
(mm
2
)
(V)
(mW)
(C)
(C)
S2506-02
S2506-04
150
S6786
2.77 2.77
7.7
S6967
S6967-01
Plastic
5.5 4.8
26.4
35
50
-25 to +85 -40 to +100
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
Short
circuit
current
Isc
100 lx
Dark current
I
D
Temp.
coefficient
of
I
D
T
CID
Cut-off
frequency
fc
R
L
=50
-3 dB
Terminal
capacitance
Ct
f=1 MHz
NEP
Type No.
(nm)
(nm)
p 660 nm 780 nm 830 nm
(A)
Typ.
(nA)
Max.
(nA) (times/C) (MHz)
(pF)
(W/Hz
1/2
)
S2506-02
320 to 1100
0.4 0.48 0.5
7.3
S2506-04
760 to 1100 960
0.56
-
-
0.25
4.1
0.1 *
1
10 *
25 *
15 *
1.0 10
-14
*
S6786
7.5
0.3 *
60 *
15 *
1.5 10
-14
*
S6967
320 to 1060
0.65 0.45 0.55 0.6
26
S6967-01
700 to 1060
900
0.63
-
0.48 0.54
18
0.5 *
5 *
1.15
50 *
50 *
2.0 10
-14
*
*1: V
R
=12 V
*2: V
R
=10 V
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode
S2506/S6967 series, S6786
Cat. No. KPIN1048E01
Apr. 2001 DN
7.0 0.2
3.5 0.2
7.8 0.2
2.8 0.2
2.3 0.3
1.0
0.5
5.08
14.3 1
CENTER OF
ACTIVE AREA
ACTIVE AREA
2.77 2.77
2.7 0.2 0.2 MAX.
0.5
1.4
1.1
INCIDENT LIGHT
5.0
s
s
s
s
s
Dimensional outline (unit: mm, tolerance unless otherwise noted: 0.1)
0
0.1
0.2
0.3
0.4
0.7
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO SENSITIVITY
(A/W)
(Typ. Ta=25 C)
0.5
0.6
S2506-04
S2506-02
S6786, S6967
S6967-01
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT
(
%
/
C
)
0
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
1 pA
10 pA
100 pA
1 nA
10 nA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 C)
S2506-02/-04
S6786
S6967/-01
s
Spectral response
s
Dark current vs. reverse voltage
s
Photo sensitivity temperature characteristic
(S2506-02)
1 pA
10 pA
100 pA
1 nA
10 nA
10 A
-20
0
20
40
60
AMBIENT TEMPERATURE (C)
DARK CURRENT
(Typ.)
80
100 nA
1 A
S6786 (V
R
=10 V)
S2506-02/-04 (V
R
=12 V)
S6967/-01 (V
R
=10 V)
1 pF
10 pF
100 pF
1 nF
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
S6786
S2506-02/-04
(Typ. Ta=25 C, f=1 MHz)
S6967/-01
90
80
70
60
50
30
RELATIVE SENSITIVITY
40
20
10
0
10
20
90
80
70
60
50
30
40
80 %
100 %
20 %
40 %
60 %
(Typ. Ta=25 C)
1.0
0.5
3.5 0.2
7.0 0.2
7.8 0.2
(6.45)
3.65 0.2
2.3 0.3
5.08
(0.3)
(0.3)
(0.5)
(0.5)
(0.4)
(0.4)
(0.6)
(0.6)
1.0
1.0
14.3 1
CENTER OF
ACTIVE AREA
DETAILS OF LEAD ROOT
ACTIVE AREA
5.5 4.8
2.7 0.2 0.2 MAX.
0.5
1.4
1.1
INCIDENT LIGHT
5.0
KPINB0167EA
KPINB0063EC
KPINB0168EA
s
Dark current vs. ambient temperature s
Terminal capacitance vs.
reverse voltage
s
Directivity (S2506-02)
KPINB0169EA
KPINB0170EA
KPINB0065EB
S2506 series, S6786
S6967 series
KPINA0076EA
KPINA0084EA
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