ChipFind - документация

Электронный компонент: S2551

Скачать:  PDF   ZIP
Features
l Long, narrow active area: 1.2 29.1 mm
l High sensitivity
l Low capacitance
Applications
l Analytical instruments
l Optical measurement equipment
P H O T O D I O D E
Si photodiode
For visible to infrared precision photometry
S2551
S2551 is a Si photodiode having a long active area of 1.2 29.1 mm, designed for visible to infrared precision photometry.
s
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
Max.
30
V
Operating temperature
Topr
-20 to +60
C
Storage temperature
Tstg
-20 to +80
C
s
Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
-
320 to 1060
-
nm
Peak sensitivity wavelength
p
-
920
-
nm
=p
-
0.6
-
A/W
Photo sensitivity
S
=663 nm
-
0.37
-
A/W
Short circuit current
Isc
100 lx
24
30
-
A
Dark current
I
D
V
R
=10 mV
-
-
1
nA
Temperature coefficient of I
,
T
CID
-
1.15
-
times/C
Rise time
tr
V
R
=0 V, R
L
=1 k
-
0.6
-
s
Terminal capacitance
Ct
V
R
=0 V, f=10 kHz
-
350
-
pF
Shunt resistance
Rsh
V
R
=10 mV
0.01
0.03
-
G
Noise equivalent power
NEP
-
3.9 10
-14
-
W/Hz
1/2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si photodiode
S2551
Cat. No. KSPD1027E01
Mar. 2001 DN
SHUNT RESISTANCE
AMBIENT TEMPERATURE (C)
-20
(Typ. V
R
=10 mV)
10 k
0
20
40
60
80
100 k
1 M
10 M
100 M
1 G
10 G
100 G
1 T
10
2
(Typ. Ta
=25 C, V
R
=0 V)
10 ns
10
3
10
4
10
5
100 ns
1
s
10
s
100
s
1 ms
RISE TIME
LOAD RESISTANCE (
)
DARK CURRENT
REVERSE VOLTAGE (V)
0.01
(Typ. Ta
=25 C)
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
10 nA
TEMPERATURE COEFFICIENT (%/

C)
190
400
600
800
1000
WAVELENGTH (nm)
0
(Typ. )
+0.5
+1.0
-1.5
+1.5
0.45
LEAD
ACTIVE AREA
1.2 29.1
13
3.2 0.2
0.5
29.1
33.1 0.7
40.0 0.7
3.0
- 0.3
+
0
33.1 0.7
1.2
PHOTOSENSITIVE
SURFACE
The resin coating may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
KSPDA0116EA
s
s
s
s
s Dimensional outline (unit: mm)
0.1
190
400
600
800
1000
0.3
0.2
(Typ. Ta
=25 C)
0.4
0.5
0.6
0.7
PHOTO SENSITIVITY (A/W)
WAVELENGTH (nm)
s Spectral response
KSPDB0173EA
KSPDB0053EB
s Rise time vs. load resistance
KSPDB0174EA
KSPDB0175EA
s
Dark current vs. reverse voltage
s
s
s
s
s Photo sensitivity temperature characteristic
s Shunt resistance vs. ambient temperature
KSPDB0176EA