CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1995
9-3
S E M I C O N D U C T O R
HGTG40N60B3
70A, 600V, UFS Series N-Channel IGBT
Package
JEDEC STYLE TO-247
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
E
C
G
C
E
G
Features
70A, 600V at T
C
= +25
o
C
Square Switching SOA Capability
Typical Fall Time - 160ns at +150
o
C
Short Circuit Rating
Low Conduction Loss
Description
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49052
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG40N60B3
TO-247
G40N60B3
NOTE: When ordering, use the entire part number.
PRELIMINARY
May 1995
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG40N60B3
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector-Gate Voltage, R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
600
V
Collector Current Continuous
At T
C
= +25
o
C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
70
A
At T
C
= +110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
40
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
330
A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
C
= +150
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
160A at 0.8 BV
CES
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
290
W
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.33
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to +150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
2
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
10
s
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
C
= +125
o
C, R
GE
= 25
.
File Number
3943
9-4
Specifications HGTG40N60B3
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
CE
= 250
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
J
= +25
o
C
-
-
250
A
V
CE
= BV
CES
T
J
= +150
o
C
-
-
7.5
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
CE
= 40A
V
GE
= 15V
T
J
= +25
o
C
-
1.4
2.0
V
T
J
= +150
o
C
-
1.5
2.3
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
CE
= 250A,
V
CE
= V
GE
T
J
= +25
o
C
3.0
5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
300
nA
Latching Current
I
L
T
J
= +150
o
C
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 45
H
160
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
CE
= 40A, V
CE
= 0.5 BV
CES
-
8.0
-
V
On-State Gate Charge
Q
G(ON)
I
CE
= 40A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
240
320
nC
V
GE
= 20V
-
350
450
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= +150
o
C
I
CE
= 40A
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 100
H
-
50
-
ns
Current Rise Time
t
RI
-
40
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
350
435
ns
Current Fall Time
t
FI
-
160
200
ns
Turn-On Energy
E
ON
-
1400
-
J
Turn-Off Energy (Note 1)
E
OFF
-
3300
-
J
Thermal Resistance
R
JC
-
-
0.43
o
C/W
NOTE:
1. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
9-5
HGTG40N60B3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, V
CE
= 10V
0
2
4
6
8
10
12
0
20
40
60
80
100
120
140
160
180
200
T
C
= -40
o
C
T
C
= +150
o
C
T
C
= +25
o
C
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
12V
10V
8.5V
8.0V
7.0V
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, T
C
= +25
o
C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
40
60
80
100
120
140
160
180
200
9V
7.5V
9.5V
V
GE
= 15V
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
PACKAGE LIMIT
DIE LIMIT
V
GE
= 15V
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= +150
o
C
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, V
GE
= 15V
0
1
2
3
4
0
50
100
150
200
T
C
= -40
o
C
T
C
= +25
o
C
C, CAP
ACIT
ANCE (nF)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
0
5
10
15
20
25
0
2
4
6
8
10
12
14
C
OSS
C
ISS
C
RSS
BV
CE
= 200V
V
GE
, GA
TE-EMITTER VOL
T
AGE (V)
V
CE
, COLLECT
OR - EMITTER
VOL
T
AGE (V)
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 4.06mA, R
L
= 7.5
, T
C
= +25
o
C
0
50
100
150
200
250
0
150
300
450
600
0
5
10
15
20
BV
CE
= 600V
BV
CE
= 400V
9-6
HGTG40N60B3
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
Typical Performance Curves
(Continued)
t
D(ON)I
, TURN-ON DELA
Y TIME (ns)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
H
10
20
30
40
50
60
70
80
90
100
10
20
30
50
70
100
10
20
30
40
50
60
70
80
90
100
200
250
300
350
400
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
H
t
D(OFF)I
, TURN-OFF DELA
Y TIME (ns)
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
H
t
RI
,
TURN-ON RISE TIME
(ns)
10
20
30
40
50
60
70
80
90
100
10
20
30
50
70
100
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
H
t
FI
,
F
ALL TIME
(ns)
20
40
60
80
100
10
20
30
50
100
200
300
500
1000
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 3
, L = 100
H
E
ON
, TURN-ON ENERGY LOSS
(mJ)
10
20
30
40
50
60
70
80
90
100
1
2
3
4
5
6
V
CE(PK)
= 480V, V
GE
= 15V
T
J
= +150
o
C, R
G
= 3
, L = 100
H
E
OFF
, TURN-OFF ENERGY LOSS
(mJ)
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
9-7
HGTG40N60B3
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
Typical Performance Curves
(Continued)
10
20
30
50
70
100
1
2
5
10
20
50
100
200
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, T
C
= +75
o
C, V
GE
= +15V, R
G
= 3
, L = 100
H
f
MAX
, OPERA
TING FREQUENCY (kHz)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 0.43
o
C/W
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
0
100
200
300
400
500
600
0
40
80
120
160
200
T
C
= +150
o
C, V
GE
= 15V, R
G
= 3
, L = 45
H
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.1
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
,
NORMALIZED THERMAL
RESPONSE (
o
C/W)
0.02
0.05
0.01
0.2
0.5
SINGLE PULSE
P
D
t
1
t
2
NOTES:
DUTY FACTOR, D = t
1
/t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
R
G
= 3
L = 100
H
V
DD
= 480V
+
-
RHRP3060
t
FI
t
D(OFF)I
t
RI
t
D(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
9-8
HGTG40N60B3
Operating Frequency Information
Operating frequency information for a typical device (Figure
13) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
CE
) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
MAX1
or
f
MAX2
whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. t
D(OFF)I
and t
D(ON)I
are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JMAX
.
t
D(OFF)I
is important when controlling output ripple under a
lightly loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The allow-
able dissipation (P
D
) is defined by P
D
= (T
JMAX
- T
C
)/R
JC
.
The sum of device switching and conduction losses must not
exceed P
D
. A 50% duty factor was used (Figure 13) and the
conduction losses (P
C
) are approximated by P
C
= (V
CE
x
I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 17. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the inte-
gral of the instantaneous power loss (I
CE
x V
CE
) during turn-
off. All tail losses are included in the calculation of E
OFF
;
i.e.the collector current equals zero (I
CE
= 0).
Handling Precautions for IGBT's
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler's body capacitance is not discharged through
the device. With proper handling and application proce-
dures, however, IGBT's are currently being extensively used
in military, industrial and consumer applications, with virtu-
ally no damage problems due to electrostatic discharge.
IGBT's can be handled safely if the following basic precau-
tions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as
"ECCOSORBD LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rat-
ing of V
GEM
. Exceeding the rated V
GE
can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
Trademark Emerson and Cumming, Inc.
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