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Электронный компонент: RFD10P03LSM9A

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S E M I C O N D U C T O R
1
May 1997
Features
10A, 30V
r
DS(ON)
= 0.200
Temperature Compensating PSPICE Model
PSPICE Thermal Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Formerly developmental type TA49205.
Description
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD10P03L
TO-251AA
10P03L
RFD10P03LSM
TO-252AA
10P03L
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the
TO-252AA
variant in tape and reel, i.e.
RFD10P03LSM
9A..
G
D
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
3515.1
RFD10P03L, RFD10P03LSM,
RFP10P03L
10A, 30V, 0.200
, Logic Level
P-Channel Power MOSFET
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD10P03L, RFD10P03LSM,
RFP10P03L
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-30
V
Drain to Gate Voltage (R
GS
= 20K
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
10
See Figure 5
A
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65
0.43
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(0.063in (1.6mm) from case for 10s)
300
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
-30
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
-1
-
-2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V,
T
C
= 25
o
C
-
-
-1
A
V
GS
= 0V
T
C
= 150
o
C
-
-
-50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
100
nA
Drain to Source On Resistance
(Note 1)
r
DS(ON)
I
D
= 10A, V
GS
= -5V
-
-
0.200
I
D
= 10A, V
GS
= -4.5V
0.220
Turn-On Time
t
ON
V
DD
= 15V, I
D
10A
R
L
= 1.5
, R
GS
= 5
,
V
GS
= -5V
-
-
100
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
50
-
ns
Turn-Off Delay Time
t
d(OFF)
-
35
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
80
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0 to -10V
V
DD
= -24V,
I
D
10A,
R
L
= 2.4
-
25
30
nC
Gate Charge at -5V
Q
g(-5)
V
GS
= 0 to -5V
-
13
16
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 to -1V
-
1.2
1.5
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V
f = 1MHz
-
1035
-
pF
Output Capacitance
C
OSS
-
340
-
pF
Reverse Transfer Capacitance
C
RSS
-
35
-
pF
Thermal Resistance, Junction to Case
R
JC
-
-
2.30
o
C/W
Thermal Resistance, Junction to Ambient
R
JA
RFD10P03L, RFD10P03LSM
-
-
100
o
C/W
RFP10P03L
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Forward Voltage
V
SD
I
SD
= -10A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -10A, dI
SD
/dt = -100A/
s
-
-
75
ns
NOTE:
1. Pulse Test: Pulse width
300
s, Duty Cycle
2%.
RFD10P03L, RFD10P03LSM, RFP10P03L
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-4
-2
0
25
50
75
100
125
150
-8
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-12
-6
175
-10
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
JC
, NORMALIZED THERMAL IMPED
ANCE
10
-3
10
-2
10
-1
10
0
10
-5
10
-4
1.0
0.01
0.1
NOTES: DUTY FACTOR: D = t
1
/t
2
P
DM
t
1
t
2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
2.0
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = -30V
100ms
DC
T
J
= MAX RATED
T
C
= 25
o
C
10ms
1ms
100
s
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
t, PULSE WIDTH (s)
I
DM
,
PEAK CURRENT CAP
ABILITY (A)
V
GS
= -10V
V
GS
= -5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-5
I
I
25
175
T
C
150
------------------------
=
T
C
= 25
o
C
-100
RFD10P03L, RFD10P03LSM, RFP10P03L
4
NOTE: Refer to Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
-50
-10
-1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
IF R
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L) (I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R = 0
0
0
-1.0
-2.0
-3.0
-5.0
-10
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4V
V
GS
= -10V
-4.0
V
GS
=-3.5V
V
GS
= -3V
V
GS
= -5V
-20
-15
-25
-5
PULSE DURATION = 250
s,
T
C
= 25
o
C
0
-3.0
-4.5
-6.0
-1.5
0
-10
175
o
C
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
-20
-25
-15
-5
V
DD
= -15V
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
r
DS(ON),
DRAIN T
O
SOURCE
0
100
200
300
400
-2.0
-4.0
-6.0
-8.0
-10.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -20A
I
D
= -10A
I
D
= -5A
I
D
= -2.5A
T
C
= 25
o
C
ON RESIST
ANCE (m
)
NORMALIZED DRAIN T
O
SOURCE
2.0
0.5
0.0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.0
80
1.5
160
200
-80
V
GS
= -5V, I
D
= -10.0A
ON RESIST
ANCE
NORMALIZED DRAIN T
O
SOURCE
1.2
1.0
0.9
0.8
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.1
80
BREAKDO
WN V
O
L
T
A
GE
-80
160
200
I
D
=- 250uA
RFD10P03L, RFD10P03LSM, RFP10P03L
5
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
-80
-40
0
40
80
120
160
0.4
0.8
1.0
1.2
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= -250
A
0.6
125
20
30
40
50
0
25
100
150
50
0
10
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
d(ON)
t
r
t
f
75
V
DD
= -15V, I
D
= -10A, R
L
= 1.50
-30
-22.5
-15
-7.5
0
-5.00
-3.75
-2.50
-1.25
0.00
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
s)
V
DD
= BV
DSS
R
L
= 3.0
I
G(REF)
= -0.25mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DS
,
DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
,
G
A
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
= -5V
V
DD
=BV
DSS
800
600
400
200
0
0
-5
-10
-15
-20
-25
C
,
CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1200
C
ISS
C
OSS
C
RSS
1000
V
GS
= 0V,
f
= 1MHz
RFD10P03L, RFD10P03LSM, RFP10P03L