Copyright
Harris Corporation 1994
1
S E M I C O N D U C T O R
RFD3055, RFD3055SM
RFP3055
12A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs (MegaFETs)
Packaging
JEDEC TO-220AB
TOP VIEW
JEDEC TO-251AA
TOP VIEW
JEDEC TO-252AA
TOP VIEW
Symbol
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
D
G
S
Features
12A, 60V
r
DS(ON)
= 0.150
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
+175
o
C Operating Temperature
Description
The RFD3055, RFD3055SM and RFP3055 N-Channel
power MOSFETs are manufactured using the MegaFET pro-
cess. This process, which uses feature sizes approaching
those of LSI integrated circuits gives optimum utilization of
silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
The RFD3055 is supplied in the JEDEC TO-251AA plastic
package, the RFD3055SM is supplied in the JEDEC
TO-252AA plastic package and the RFP3055 is supplied in the
JEDEC TO-220AB plastic package. Due to space limitations
the RFD3055 and RFD3055SM are branded FD3055.
When ordering use the entire part number; eg.
RFD3055SM.
Developmental type TA49082.
February 1994
Absolute Maximum Ratings
(T
C
= +25
o
C), Unless Otherwise Specified
RFD3055, RFD3055SM, RFP3055
UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
12
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Refer to Peak Current Curve
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
AM
30
A
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
53
W
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
0.357
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-55 to +175
o
C
File Number
3648
2
Specifications RFD3055, RFD3055SM, RFP3055
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 0.25mA, V
GS
= 0V
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 0.25mA
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V,
V
GS
= 0V
T
C
= +25
o
C
-
-
1
A
T
C
= +150
o
C
-
-
50
A
Gate-Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 12A, V
GS
= 10V
-
-
0.150
W
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 12A
R
L
= 2.5
, V
GS
= +10V
R
GS
= 10
-
-
40
ns
Turn-On Delay Time
t
D(ON)
-
7
-
ns
Rise Time
t
R
-
21
-
ns
Turn-Off Delay Time
t
D(OFF)
-
16
-
ns
Fall Time
t
F
-
10
-
ns
Turn-Off Time
t
OFF
-
-
40
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0 to 20V
V
DD
= 48V,
I
D
= 12A,
R
L
= 4
-
19
23
nC
Gate Charge at 10V
Q
G(10)
V
GS
= 0 to 10V
-
10
12
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0 to 2V
-
0.6
0.8
nC
Plateau Voltage
V
(PLATEAU)
I
D
= 12A, V
DS
= 15V
-
-
7.5
V
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
300
-
pF
Output Capacitance
C
OSS
-
100
-
pF
Reverse Transfer Capacitance
C
RSS
-
30
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
2.8
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-251 and TO-252 Package
-
-
100
o
C/W
TO-220 Package
-
-
80
o
C/W
Source-Drain Diode Ratings and Characteristics
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Forward Voltage
V
SD
I
SD
= 12A
-
-
1.5
V
Reverse Recovery Time
t
RR
I
SD
= 12A, dI
SD
/dt = 100A/
s
-
-
100
ns
3
RFD3055, RFD3055SM, RFP3055
Typical Performance Curves
FIGURE 1. SAFE- OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
50
10
1
0.1
1
10
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
T
C
= +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
s
10ms
DC
V
DSS
MAX = 60V
I
D
, DRAIN CURRENT (A)
10
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL RESPONSE (Z
JC
)
NORMALIZED
P
DM
t
1
t
2
SINGLE PULSE
10
8
6
4
2
0
25
50
75
100
125
150
175
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
12
14
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
100
t, PULSE WIDTH (ms)
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
'I
I
25
*
175
T
C
150
--------------------
=
T
C
= +25
o
C
I
DM
,
PEAK CURRENT CAP
ABILITY (A)
200
24
18
12
6
0
0.0
1.5
3.0
4.5
6.0
7.5
I
D
, DRAIN CURRENT (A)
V
DS,
DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 250
s
T
C
= +25
o
C
+25
o
C
+175
o
C
0.0
2.0
4.0
6.0
8.0
10.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
I
D(ON)
,
ON ST
A
TE DRAIN CURRENT (A)
24
18
12
6
0
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DD
= 15V
4
RFD3055, RFD3055SM, RFP3055
FIGURE 7. NORMALIZED R
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
Typical Performance Curves
(Continued)
PULSE DURATION = 250
s, V
GS
= 10V, I
D
= 12A
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
NORMALIZED R
DS(ON)
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
160
120
200
T
J,
JUNCTION TEMPERATURE (
o
C)
NORMALIZED V
GS(TH)
I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
NORMALIZED BV
DSS
T
J,
JUNCTION TEMPERATURE (
o
C)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
POWER DISSIP
A
TION MUL
TIPLIER
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
400
600
200
0
0
5
10
15
20
25
C
,
CAP
ACIT
ANCE (pF)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
60
45
30
15
0
10
7.5
5.0
2.5
0
V
GS
,
GA
TE-SOURCE VOL
T
AGE (V)
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 5
I
G(REF)
= 0.24mA
V
GS
= 10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DS
,
DRAIN SOURCE VOL
T
AGE (V)
5
RFD3055, RFD3055SM, RFP3055
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
STARTING T
J
= +150
o
C
STARTING T
J
= +25
o
C
50
10
1
0.001
0.01
0.1
1
t
AV,
TIME IN AVALANCHE (msec)
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
AS
,
A
V
ALANCHE CURRENT (A)
V
DD
V
DS
BV
DSS
t
p
I
AS
t
AV
t
P
V
GS
0.01
L
I
L
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
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