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Электронный компонент: 1SS110

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1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z)
Rev. 2
Features
Low forward resistance. (r
f
= 0.9
max)
Suitable for 5mm pitch high speed automatical insertion.
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
Package Code
1SS110
Verdure
MHD
Outline
1
2
Cathode band
1. Cathode
2. Anode
1SS110
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Junction temperature
Tj
175
C
Storage temperature
Tstg
65 to +175
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
--
--
1.0
V
I
F
= 10mA
Reverse voltage
V
R
35
--
--
V
I
R
= 10
A
Reverse current
I
R
--
--
0.1
A
V
R
= 25V
Capacitance
C
--
--
1.2
pF
V
R
= 6V, f = 1MHz
Forward resistance
r
f
--
--
0.9
I
F
= 2mA, f = 100MHz
1SS110
0
0.2
0.4
0.6
0.8
1.0
10
4
10
6
10
8
10
10
10
12
Forward voltage V (V)
F
Forward current I (A)
F
10
2
Fig.1 Forward current Vs. Forward voltage
1.0
10
10
1.0
10
Capacitance C (pF)
Reverse voltage V (V)
R
f = 1MHz
40
1
Fig.2 Capacitance Vs. Reverse voltage
1SS110
10
10
10
1.0
10
10
Forward current I (A)
F
Forward resistance r ( )
f
1
2
4
10
3
2
1
10
2
10
f = 100MHz
Fig.3 Forward resistance Vs. Forward current
1SS110
Package Dimensions
26.0 Min
2.4 Max
2.0
Max
0.4
26.0 Min
Cathode band (Verdure)
1
2
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
MHD
DO-34
--
0.084
1
2
Cathode
Anode
Unit: mm