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Электронный компонент: 2SA1194

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2SA1194(K)
Silicon PNP Epitaxial
Application
High gain amplifier
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
3
2
1
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
1
A
Collector peak current
I
C(peak)
2
A
Collector power dissipation
P
C
1
W
P
C
*
1
8
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C
2SA1194(K)
2
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
60
--
--
V
I
C
= 1 mA, R
BE
=
Collector cutoff current
I
CBO
--
--
1.0
A
V
CB
= 60 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
1.0
A
V
EB
= 7 V, I
C
= 0
DC current transfer ratio
h
FE
1000
--
--
V
CE
= 3 V, I
C
= 500 mA*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
2.0
V
I
C
= 500 mA, I
B
= 1 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
--
--
2.0
V
Turn on time
t
on
--
0.7
--
s
I
C
= 500 mA
Turn off time
t
off
--
0.8
--
s
I
B1
= I
B2
= 1 mA
Note:
1. Pulse test
0
50
150
100
Case Temperature T
C
(
C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
4
8
12
0.01
0.03
0.1
0.3
3
10
1.0
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0.1
1.0
100
30
10
3
0.3
Area of Safe Operation
Ta = 25
C
DC Operation
(T
C
= 25
C)
PW = 1 ms (1 Shot)
PW = 10 ms (1 Shot)
I
C
(max)
i
C
(peak)
2SA1194(K)
3
0.01
200
400
600
800
1,000
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
0
6
4
8
2
10
Typical Output Characteristics
T
C
= 25
C
1.0
0.6
0.4
0.2
0.1
0.04
0.06
0.08
0.02
0.01 mA
0.8
P
c
= 8 W
I
B
= 0
100
1,000
3,000
10,000
30,000
100,000
300
Collector current I
C
(mA)
DC current transfer ratio h
FE
10
1,000
300
100
30
DC Current Transfer Ratio vs.
Collector Current
Ta = 75
C
25
C
V
CE
= 3 V
Pulse
0.1
0.3
1.0
3
10
Collector current I
C
(mA)
10
30
100
300
1,000
Saturation Voltage vs. Collector Current
Ta = 25
C
l
C
= 500 l
B
Pulse
75
C
V
BE (sat)
V
CE (sat)
Collector to emitter saturation voltage
V
CE (sat)
(V)
Base to emitter saturation voltage
V
BE (sat)
(V)
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(mA)
Switching time t (
s)
10
30
100
300
1,000
Switching Time vs. Collector Current
t
off
t
on
t
d
t
stg
I
C
= 500 I
B
Ta = 25
C
V
IN
V
CC
V
IN
V
BB
6 V
I
C
R
L
R
1
R
2
l
B1
l
B2
50
+
+
D.U.T.
0.002
0.002
50
50
t
r
, t
f
10ns
PW 10
s
duty ratio 10%
Switching Time Test Circuit
0
10%
10%
10%
90%
90%
90%
Input
Output
10 V
0
t
d
t
on
t
off
t
stg
Response Waveform
3.1
+0.15
0.1
8.0
0.5
2.3
0.3
1.1
3.7
0.7
11.0
0.5
15.6
0.5
0.8
2.29
0.5
2.29
0.5
0.55
1.2
2.7
0.4
120
120
120
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
--
--
0.67 g
Unit: mm
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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