2SA673, 2SA673A
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SA673
2SA673A
Unit
Collector to base voltage
V
CBO
35
50
V
Collector to emitter voltage
V
CEO
35
50
V
Emitter to base voltage
V
EBO
4
4
V
Collector current
I
C
500
500
mA
Collector power dissipation
P
C
400
400
mW
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Electrical Characteristics (Ta = 25C)
2SA673
2SA673A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
35
--
--
50
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
35
--
--
50
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
4
--
--
4
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
--
--
0.5
A
V
CB
= 20 V, I
E
= 0
Collector to emitter
saturation voltage
V
CE(sat)
--
0.2
0.6
--
0.2
0.6
V
I
C
= 150 mA,
I
B
= 15 mA*
2
DC current trnsfer ratio
h
FE
*
1
60
--
320
60
--
320
V
CE
= 3 V,
I
C
= 10 mA
DC current trnsfer ratio
h
FE
10
--
--
10
--
--
V
CE
= 3 V,
I
C
= 500 mA*
2
Base to emitter voltage
V
BE
--
0.64 --
--
0.64 --
V
V
CE
= 3 V,
I
C
=10 mA
Notes: 1. The 2SA673 and 2SA673A are grouped by h
FE
as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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