2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
Application
High voltage medium speed switching
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SA778(K), 2SA778A(K)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SA778(K)
2SA778A(K)
Unit
Collector to base voltage
V
CBO
150
180
V
Collector to emitter voltage
V
CEO
150
180
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
50
50
mA
Collector power dissipation
P
C
200
200
mW
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Electrical Characteristics (Ta = 25C)
2SA778(K)
2SA778A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
150 --
--
180
--
--
V
I
C
= 50
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CER
150 --
--
180
--
--
V
I
C
= 50
A,
R
BE
= 30 k
Collector cutoff current
I
CBO
--
--
1.0
--
--
--
A
V
CB
= 100 V, I
E
= 0
--
--
--
--
--
1.0
A
V
CB
= 150 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
1.0
--
--
1.0
A
V
EB
= 5 V, I
C
= 0
DC current transfer ratio h
FE
30
100
--
40
100
200
V
CE
= 3 V,
I
E
= 15 mA
Collector to emitter
saturation voltage
V
CE(sat)
--
0.3
1.0
--
0.3
1.0
V
I
C
= 15 mA,
I
B
= 1 mA
Base to emitter
saturation voltage
V
BE(sat)
--
0.77 1.0
--
0.77 1.0
V
I
C
= 15 mA,
I
B
= 1 mA
Collector output
capacitance
Cob
--
--
10
--
--
10
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Gain bandwidth product f
T
--
50
--
--
50
--
MHz
V
CE
= 3 V,
I
C
= 15 mA
Turn on time
t
on
--
135
--
--
135
--
ns
V
CC
= 10.3 V
Turn off time
t
off
--
1.7
--
--
1.7
--
s
I
C
= 10 I
B1
= 10
I
B2
= 10 mA
Storage time
t
stg
--
--
1.0
--
--
1.0
s
V
CC
= 10 V,
I
C
=17 mA
I
B1
= 1mA,
I
B2
= 12 mA
2SA778(K), 2SA778A(K)
3
Switching Time Test Circuit
Test Circuit
P.G.
t
r
, t
f
15ns
PW 5
s
duty ratio 10%
CRT
1 k
6 k
6 k
D.U.T.
0.002
0.002
50
50
50
+
+
6 V
10.3 V
t
on
, t
off
Unit R :
C :
F
`
P.G.
t
r
, t
f
5ns
PW 5
s
duty ratio = 50%
Switching Time Test Circuit
Test Circuit
CRT
2.4 k
D.U.T
0.002
0.002
+ +
t
stg
510
0.1
0.1
50
16
10 V
3 V
50
50
Unit R :
C :
F
Response Waveform
0
10%
10%
10%
90%
90%
90%
Input
Output
13 V
0
t
d
t
on
t
off
t
stg
0
0
10%
10%
Input
Output
t
stg
Response Waveform
+7 V
2SA778(K), 2SA778A(K)
4
0
50
100
150
Ambient Temperature Ta (
C)
Collector power dissipation Pc (mW)
Maximum Collector Dissipation Curve
300
200
100
Typical Output Characteristics (1)
Collector to Emitter Voltage V
CE
(V)
0
1
2
3
4
5
Collector Current I
C
(mA)
50
40
30
20
10
I
B
= 0
0.05 mA
0.1
0.2
0.3
0.4
0.5
0.6
1.0
0.15
P
C
= 200 mW
0.9
0.8
0.7
Collector to Emitter Voltage V
CE
(V)
0
40
80
120
160
200
Collector Current I
C
(mA)
Typical Output Characteristics (2)
0.5
0.4
0.3
0.2
0.1
I
B
= 0
1
A
2
3
4
Collector Cutoff Current vs.
Collector to Base Voltage
Collector Current I
CBO
(nA)
Collector to Base Voltage V
CB
(V)
300
100
30
10
3
1.0
0.3
200
160
120
80
40
0
Ta = 25
C
50
75
100
125
2SA778(K), 2SA778A(K)
5
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
1
2
5
10
20
50
40
60
80
100
120
140
DC current transfer ratio h
FE
V
CE
= 3 V
Ta = 25
C
0
25
50
75
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current I
C
(mA)
Collector to emitter saturation voltage
V
CE
(sat)
(V)
0.1 0.2
0.5 1.0 2
5 10 20
50
0
0.4
0.8
1.2
1.6
2.0
I
C
= 10 I
B
Base to Emitter Saturation Voltage vs.
Collector Current
Collector Current I
C
(mA)
0.1 0.2
0.5 1.0 2
5 10 20
50
I
C
= 10 I
B
Base to emitter saturation voltage
V
BE
(sat)
(V)
0.4
0.5
0.6
0.7
0.8
0.9
Ta = 75
C
50
25
0
25
Collector output capacitance C
ob
(pF)
Emitter input capacitance C
ib
(pF)
Collector to Base Voltage V
CB
(V)
Emitter to Base Voltage V
EB
(V)
0
2
4
6
8
10
12
0.5 1.0
2
5
10
20
50
f = 1 MHz
C
ib
(I
C
= 0)
C
ob
(I
E
= 0)
Input and Output Capacitance vs.
Voltage
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