2SB1059
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD1490
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SB1059
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
70
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
1
A
Collector power dissipation
P
C
0.75
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
70
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 55 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.2
A
V
EB
= 6 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
100
--
320
V
CE
= 2 V, I
C
= 0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.6
V
I
C
= 1 A, I
B
= 0.1 A
Gain bandwidth product
f
T
--
65
--
MHz
V
CE
= 2 V, I
C
= 10 mA
Collector output capacitance
Cob
--
35
--
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Note:
1. The 2SB1059 is grouped by h
FE
as follows.
B
C
100 to 200
160 to 320
See characteristic curves of 2SB740.
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