2SB1688
Silicon PNP Epitaxial
High voltage amplifier
ADE-208-975A (Z)
2nd. Edition
Mar. 2001
Features
High breakdown voltage
V
CEO
= -300V min
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SB1688
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-300
V
Collector to emitter voltage
V
CEO
-300
V
Emitter to base voltage
V
EBO
-5
V
Collector current
I
C
-50
mA
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector cutoff current
I
CBO
--
--
-0.1
A
V
CB
= -300V, I
E
= 0
I
CEO
--
--
-0.1
A
V
CE
= -300V, R
BE
=
Emitter cutoff current
I
EBO
--
--
-10
A
V
EB
= -5 V, I
C
= 0
Base to emitter voltage
V
BE
--
--
-0.75
V
V
CE
= -6V,
I
C
= -1mA
DC current transfer raito
h
FE
80
--
160
--
V
CE
= -6V, I
C
= -2mA
Collector to emitter saturation
voltage
V
CE(sat)
--
--
-0.9
V
I
C
= -30mA, I
B
= -3mA
2SB1688
3
Main Characteristics
150
100
50
Ambient Temperature Ta (
C)
0
1.5
0.5
1.0
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
Typical Output Characteristics
Collector Current I
C
(mA)
0
-20
-40
-60
-80
-100
Collector to Emitter Voltage V
CE
(V)
-10
-8
-6
-4
-2
Pulse Test
I
B
= -10
A
-20
A
-30
A
-40
A
-50
A
-70
A
-60
A
Typical Transfer Characteristics
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
-100
-10
-1.0
-0.1
-0.01
V
CE
= -6 V
Pulse test
-25
C
25
C
Ta = 75
C
-1.0
-0.8
-0.6
-0.4
-0.2
0
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
-0.1
-1.0
-10
-100
1
10
100
1,000
DC Current Transfer Ratio h
FE
V
CE
= -6 V
Pulse Test
-25
C
25
C
Ta = 75
C
2SB1688
4
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage
V
CE
(sat)
(V)
-0.1
-1.0
-10
-100
-0.01
-0.1
-1.0
-10
I
C
/I
B
= 10
Pulse Test
-25
C
25
C
Ta = 75
C
Gain Bandwidth Product vs.
Collector Current
Collector Current I
C
(mA)
-0.1
-1.0
-10
-100
1
10
100
1,000
Gain Bandwidth Product f
T
(MHz)
V
CE
= -6 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
-0.1
-1.0
-10
-100
0.1
1.0
10
100
f = 1 MHz
I
E
= 0
2SB1688
5
Package Dimensions
0.60 Max
0.55Max
4.8
0.4
3.8
0.4
5.0
0.2
0.7
2.3 Max
12.7 Min
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
As of January, 2001
Unit: mm
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