2SB740
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD789
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
2SB740
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
70
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
1
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
70
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 55 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.2
A
V
EB
= 6 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
100
--
320
V
CE
= 2 V, I
C
= 0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.6
V
I
C
= 1 A, I
B
= 0.1 A
Gain bandwidth product
f
T
--
150
--
MHz
V
CE
= 2 V, I
C
= 10 mA
Collector output capacitance
Cob
--
35
--
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SB740 is grouped by h
FE
as follows.
B
C
100 to 200
160 to 320
2SB740
3
150
100
50
Ambient Temperature Ta (
C)
0
1.2
0.8
0.4
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
2
6
10
4
8
Collector to Emitter Voltage V
CE
(V)
100
80
60
40
20
0
Typical Output Characteristics (1)
Collector Current I
C
(mA)
0.45
0.4
0.35
0.3
0.2
0.1
0.25
0.15
0.05 mA
I
B
= 0
0.4
1.2
2.0
0.8
1.6
Collector to Emitter Voltage V
CE
(V)
2.0
1.6
1.2
0.8
0.4
0
Typical Output Characteristics (2)
Collector Current I
C
(A)
50
40
30
20
10 mA
P
C
= 0.9 W
I
B
= 0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
1
10
3
30
100
300
1,000
Typical Transfer Characteristics
Collector Current I
C
(mA)
V
CE
= 2 V
2SB740
4
1
3
10
30
100 300 1,000
Collector Current I
C
(mA)
10
100
30
300
1,000
3,000
10,000
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio h
FE
Pulse
V
CE
= 2V
0.3
1.0
3
10
30
100 300
Collector to Base Voltage V
CB
(V)
3
30
10
100
300
1,000
3,000
Collector Output Capacitance
vs. Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
f = 1 MHz
IE = 0
10
30
100
300
1,000
Collector Current I
C
(mA)
0.3
0.1
0.03
0.01
1.0
Saturation Voltage vs.
Collector Current
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
Base to Emitter Saturation Voltage
V
BE (sat)
(V)
Pulse
I
C
= 10 I
B
V
BE (sat)
V
CE (sat)
0.60 Max
0.5
0.1
4.8
0.3
3.8
0.3
8.0
0.5
0.7
2.3 Max
10.1 Min
0.5
1.27
2.54
0.65
0.1
0.75 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
--
Conforms
0.35 g
Unit: mm
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