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Электронный компонент: 2SB791

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2SB791(K)
Silicon PNP Epitaxial
Application
Medium speed and power switching complementary pair with 2SD970(K)
Outline
TO-220AB
2 k
(Typ)
200
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
8
A
Collector peak current
I
C(peak)
12
A
Collector power dissipation
P
C
*
1
40
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C
2SB791(K)
2
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
--
--
V
I
C
= 25 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
100
A
V
CB
= 120 V, I
E
= 0
I
CEO
--
--
10
A
V
CE
= 100 V, R
BE
=
DC current transfer ratio
h
FE
1000
--
20000
V
CE
= 3 V, I
C
= 4 A*
1
Collector to emitter saturation
V
CE(sat)(1)
--
--
1.5
V
I
C
= 4 A, I
B
= 8 mA*
1
voltage
V
CE(sat)(2)
--
--
3.0
V
I
C
= 8 A, I
B
= 80 mA*
1
Base to emitter saturation
V
BE(sat)(1)
--
--
2.0
V
I
C
= 4 A, I
B
= 8 mA*
1
voltage
V
BE(sat)(2)
--
--
3.5
V
I
C
= 8 A, I
B
= 80 mA*
1
Turn on time
t
on
--
0.5
--
s
I
C
= 4 A, I
B1
= I
B2
= 8 mA
Storage time
t
stg
--
1.6
--
s
Fall time
t
f
--
1.5
--
s
Note:
1. Pulse test
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T
C
(
C)
Collector power dissipation P
C
(W)
Area of Safe Operation
30
10
3
1.0
0.3
Collector current I
C
(A)
0.1
0.03
1
10
100
1,000
3
30
300
Collector to emitter voltage V
CE
(V)
Ta = 25
C
1 Shot Pulse
i
C(peak)
1
s
I
Cmax
(Continuous)
DC Operation
(T
C
= 25
C)
PW = 10 ms
1 ms
10
s
2SB791(K)
3
Typical Output Characteristics
T
C
= 25
C
P
C
= 25 W
I
B
= 0
0.5 mA
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
8
6
4
2
0
1
Collector current I
C
(A)
2
Collector to emitter voltage V
CE
(V)
3
5
4
DC Current Transfer Ratio vs.
Collector Current
10000
3000
1000
300
100
0.1
0.3
DC current transfer ratio h
FE
1.0
Collector current I
C
(A)
3
10
V
CE
= 3 V
T
C
= 75
C
25
C
25
C
Saturation Voltage vs.
Collector Current
T
C
= 25
C
10
5
2
1.0
0.5
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter sauration voltage V
BE(sat)
(V)
0.2
0.1
0.1
0.5
Collector current I
C
(A)
2
10
0.2
1.0
5
V
BE(sat)
V
CE(sat)
I
C
/
I
B
= 200
500
200
I
C
/
I
B
= 500
Switching Time vs. Collector Current
Switching time t (
s)
10
3
1.0
0.3
0.1
0.03
0.01
0.1
0.3
1.0
Collector current I
C
(A)
3
10
t
f
t
on
t
stg
V
CC
= 30V
I
C
= 500 I
B1
= 500 I
B2
Ta = 25
C
2SB791(K)
4
Transient Thermal Resistance
10
3
1.0
0.3
0.1
0.03
0.01
1
10
100
1,000 (s)
(ms)
1
10
100
1,000
Time t
Thermal resistance
j-r
(
C/W)
T
C
= 25
C
1-1,000 s
1-1,000 ms
0.5
0.1
2.54
0.5
0.76
0.1
14.0
0.5
15.0
0.3
2.79
0.2
18.5
0.5
7.8
0.5
10.16
0.2
2.54
0.5
1.26
0.15
4.44
0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4
+0.2
0.1
3.6
+0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Unit: mm
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