2SC1213A (K)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
4
V
Collector current
I
C
500
mA
Collector power dissipation
P
C
400
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
50
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
--
--
V
I
C
= 1.0 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
4
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 20 V, I
E
= 0
DC current transfer ratio
h
FE
*
1
60
--
320
V
CE
= 3 V, I
C
= 10 mA
h
FE
10
--
--
V
CE
= 3 V, I
C
= 500 mA*
2
Base to emitter voltage
V
BE
0.64
--
V
V
CE
= 3 V, I
C
= 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
0.12
0.6
V
I
C
= 150 mA, I
B
= 15 mA*
2
Base to emitter satruation
voltage
V
BE(sat)
--
0.83
1.2
V
I
C
= 150 mA, I
B
= 15 mA*
2
Collector output capacitance
Cob
--
7.0
--
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
--
120
--
MHz
V
CE
= 3 V, I
C
= 10 mA
Turn on time
t
on
--
0.25
--
S
V
CC
= 10.3 V
I
C
= 10 I
B1
= 10 I
B2
= 10 mA
Turn off time
t
off
--
0.85
--
S
Storage time
t
stg
--
0.4
--
S
V
CC
= 5 V
I
C
= I
B1
= I
B2
= 20 mA
Notes: 1. The 2SC1213A(K) is grouped by h
FE
as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
2SC1213A (K)
5
0.1
0
0.04
0.12
0.08
0.20
0.16
0.32
0.28
0.24
0.3
1.0
3
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
10
30
100 300 1,000
I
C
= 10 I
B
0.4
0.5
0.6
0.7
0.8
1.1
1.0
0.9
0.1 0.2
0.5 1.0 2
5
Collector Current I
C
(mA)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Base to Emitter Saturation Voltage vs.
Collector Current
10 20
50 100 200 500
Ta = 75
C
50
25
0
25
I
C
= 10 I
B
Pulse
0.1
0
20
10
40
30
70
60
50
0.3
1.0
3
Collector to Base Voltage V
CB
(V)
Emitter to Base Voltage V
EB
(V)
Collector Output Capacitance C
ob
(pF)
Emitter input Capacitance C
ib
(pF)
Input And Output Capacitance vs. Voltage
10
30
C
ib
(I
C
= 0)
C
ob
(I
E
= 0)
f = 1 MHz
2
0
80
40
160
120
280
240
200
5
10
20
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
50
100 200
500
V
CE
= 3 V
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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