2SC1344, 2SC1345
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SC1344
2SC1345
Unit
Collector to base voltage
V
CBO
30
55
V
Collector to emitter voltage
V
CEO
30
50
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
100
100
mA
Collector power dissipation
P
C
200
200
mW
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Electrical Characteristics (Ta = 25C)
2SC1344
2SC1345
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
--
--
55
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
--
--
50
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
--
--
0.5
A
V
CB
=18 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.5
--
--
0.5
A
V
CB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
250
--
1200
250
--
1200
V
CE
= 12 V, I
C
= 2 mA
Base to emitter voltage
V
BE
--
--
0.75
--
--
0.75
V
V
CE
= 12 V, I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
--
--
0.5
--
--
0.5
V
I
C
= 10 mA, I
B
= 1 mA
Gain bandwidth product f
T
--
230
--
--
230
--
MHz
V
CE
= 12 V, I
C
= 2 mA
Collector output
capacitance
Cob
--
--
3.5
--
--
3.5
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise figure
NF
--
--
8
--
--
8
dB
V
CE
= 6 V, I
C
= 0.1 mA,
f = 10 Hz, R
g
= 10 k
--
--
1
--
--
1
dB
V
CE
= 6 V, I
C
= 0.1 mA,
f = 1 kHz, R
g
= 10 k
Note:
1. The 2SC1344 and 2SC1345 are grouped by h
FE
as follows.
D
E
F
250 to 500
400 to 800
600 to 1200
2SC1344, 2SC1345
3
Small Signal h Parameters (V
CE
= 5V, I
C
= 0.1 mA, f = 270 Hz, Ta = 25C, Emitter
common)
Item
Symbol
D
E
F
Unit
Input impedance
hie
110
170
240
k
Voltage feedback ratio
hre
9.5
14.5
16
10
4
Current transfer ratio
hfe
340
540
825
Output admittance
hoe
12.0
12.5
13.5
S
0
100
150
50
200
250
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
100
150
0
4
6
2
8
10
8
4
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
12
16
20
24
26
24
18
16
10
8
6
4
2
A
I
B
= 0
P
C
= 200 mW
14
12
22
20
0.01 0.02 0.05 0.1 0.2
0.5 1.0
2
5
10 20
50
400
500
300
200
600
700
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
Ta = 75
C
25
V
CE
= 12 V
0
2
3
1
4
5
0.2
0.4
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
0.6
0.8
1.0
V
CE
= 12 V
2SC1344, 2SC1345
4
0.4
0.6
0.7
0.5
0.8
0.9
0
20
20
Ambient Temperature Ta (
C)
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage vs. Ambient
Temperature
40
60
80
V
CE
= 12 V
I
C
= 2 mA
1
2
5
10
1
2
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
5
10
I
E
= 0
f= 1 MHz
1
2
5
10
1
2
Emitter to Base Voltage V
EB
(V)
Emitter Input Capacitance C
ie
(pF)
Emitter Input Capacitance vs.
Emitter to Base Voltage
5
10
I
C
= 0
f= 1 MHz
3
0.01
0.003
0.001
Collector Current I
C
(mA)
Signal Source Resistance R
g
(k
)
Contours of Constant Noise Figure
0.03
0.1
0.3
1.0
3.0
10 dB
8 dB
6 dB
4 dB
2 dB
1 dB
1 dB
2 dB
4 dB
6 dB
8 dB
10 dB
V
CE
= 6 V
f = 10 Hz
1.0
0.3
0.1
30
10
100
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
PDF 
ZIP
