2SC1906
Silicon NPN Epitaxial Planar
Application
VHF amplifier
Mixer, Local oscillator
Outline
1. Emitter
2. Collector
3. Base
TO-92 (2)
3
2
1
2SC1906
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
19
V
Emitter to base voltage
V
EBO
2
V
Collector current
I
C
50
mA
Emitter current
I
E
50
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
19
--
--
V
I
C
= 3 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
2
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 10 V, I
E
= 0
DC current transfer ratio
h
FE
40
--
--
V
CE
= 10 V, I
C
= 10 mA
Gain bandwidth product
f
T
600
1000
--
MHz
V
CE
= 10 V, I
C
= 10 mA
Collector output capacitance
Cob
--
1.0
2.0
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Collector to emitter saturation
voltage
V
CE(sat)
--
0.2
1.0
V
I
C
= 20 mA, I
B
= 4 mA
Base time constant
r
bb'
C
C
--
10
25
ps
V
CB
= 10 V, I
C
= 10 mA,
f = 31.8 MHz
Power gain
PG
--
33
--
dB
V
CE
= 10 V,
I
C
= 5 mA
f = 45 MHz
--
18
--
dB
V
CE
= 10 V,
I
C
= 5 mA
f = 200 MHz
2SC1906
3
0
100
200
300
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
100
150
0
4
12
8
20
16
8
4
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
12
16
20
40
I
B
= 20
A
P
C
= 300 mW
80
60
100
120
140
160
180
0
4
12
8
20
16
0.4
0.2
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
0.6
0.8
1.0
V
CE
= 10 V
0
20
60
40
120
100
80
2
5
0.5 1.0
0.1 0.2
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
10 20
50 100
V
CE
= 10 V
2SC1906
4
0
4
12
8
20
16
8
4
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Gain Bandwidth Product Curve
12
16
20
f
T
= 1,000 MHz
500
600
900
800
700
200
0
600
400
1,200
1,000
800
3
1.0
0.1
0.3
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
10
30
100
V
CE
= 10 V
f = 100 MHz
2
5
20
50
10
200
100
0.1
0.2
0.5
1.0
Collector Current I
C
(mA)
Base time Constant r
bb'
C
C
(ps)
Base Time Constant vs.
Collector Currnt
2
5
10
V
CB
= 10 V
f = 31.8 MHz
0
2
4
8
6
12
10
4
6
8
2
Input Conductance g
ie
(mS)
Input Suceptance b
ie
(mS)
Input Admittance vs. Frequency
10
12
y
ie
= g
ie
+jb
ie
V
CE
= 9 V
f = 25 MHz
I
C
= 1 mA
2 mA 4 mA
8 mA
12 mA
50
100
200
250
2SC1906
5
0
1
2
4
3
6
5
0.4
0.6
0.8
0.2
Output Conductance g
oe
(mS)
Output Suceptance b
oe
(mS)
Output Admittance vs. Frequency
1.0
1.2
y
oe
= g
oe
+jb
oe
V
CE
= 9 V
f = 25 MHz
I
C
= 1 mA
50
100
200
250
12
8
4
2
1.6
1.2
0.8
0.4
2.0
0
Reverse Transfer Conductance g
re
(mS)
Reverse Transfer Suceptance b
re
(mS)
Reverse Transfer Admittance vs.
Frequency
0.02
0.04
0.06
0.08
0.10
0
y
re
= g
re
+jb
re
V
CE
= 9 V
f = 25 MHz
I
C
= 21 mA
50
100
200
250
8
4
2
1
100
40
0
20
120
20
Forward Transfer Conductance g
fe
(mS)
Forward Transfer Suceptance b
fe
(mS)
Forward Transfer Admittance vs.
Frequency
100 120 140
80
60
20
40
0
y
fe
= g
fe
+jb
fe
V
CE
= 9 V
f =
25 MHz
I
C
= 1 mA
25
12
50
80
100
150
2
4
8
200
60
80
10
11
12
14
13
17
16
15
0.1
0.2
0
Injection Voltage V
inj
(V)
Conversion Gain CG (dB)
Conversion Gain vs. Local Oscillating
Injection Voltage
0.3
V
CB
= 9 V
I
E
= 3.5 mA
f
s
= 200 MHz
f
osc
= 245 MHz
f
IF
= 45 MHz
Emitter Inject
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