2SC2899
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
1
2
3
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
0.5
A
Collector peak current
I
C(peak)
1.0
A
Collector power dissipation
P
C
0.75
W
P
C
*
1
10
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C.
2SC2899
2
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400
--
--
V
I
C
= 0.1 A, R
BE
=
, L = 100
mH
V
CEX(sus)
400
--
--
V
I
C
= 0.5 A, I
B1
= I
B2
= 0.1 A,
V
BE
= 5 V, L = 180
H,
Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
10
--
--
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
20
A
V
CB
= 400 V, I
C
= 0
I
CEO
--
--
50
A
V
CE
= 350 V, R
BE
=
DC current transfer ratio
h
FE1
15
--
--
V
CE
= 5 V, I
C
= 0.25 A*
1
h
FE2
7
--
--
V
CE
= 5 V, I
C
= 0.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 0.25 A, I
B
= 0.05 A*
1
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
Turn on time
t
on
--
--
1.0
s
I
C
= 0.5 A, I
B1
= I
B2
= 0.1 A,
Storage time
t
stg
--
--
2.0
s
V
CC
150 V
Fall time
t
f
--
--
1.0
s
Note:
1. Pulse test
0
Case Temperature T
C
(
C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
50
100
150
1
12
8
0.001
0.01
0.1
10
1.0
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
1
3
10
30
100
300
1,000
Area of Safe Operation
I
C
(max)
(Continuous)
i
C
(peak)
Ta = 25
C, 1 Shot
25
s
50
s
250
s
PW = 1 ms
DC Operation
(T
C
= 25
C)
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Case temperature T
C
(
C)
Collector Current derating rate (%)
0
Collector Current Derating Rate
20
40
60
80
100
50
100
150
IS/B Limit Area
0.01
0.03
0.1
0.3
1.0
10
3
Thermal resistance
j-c
(
C/W)
0.01
0.1
1.0
10 (s)
0.01
0.1
1.0
10 (ms)
Transient Thermal Resistance
Time t
10 ms10 s
10
s10 ms
T
C
= 25
C
0
0.2
0.4
0.6
0.8
1.0
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
100
200
300
400
500
Reverse Bias Area of Safe Operation
350 V, 1 A
450 V, 0.1 A
400 V, 0.5 A
I
B2
= 0.1 A
300
400
600
500
Base to emitter resistance R
BE
(
)
Collector to emitter voltage V
CER
(V)
100
1 k
10 k
100 k
1 M
Collector to Emitter Voltage
vs. Base to Emitter Resistance
I
C
= 1 mA
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Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
Typical Output Characteristics
1
2
3
4
5
0.1
0.2
0.3
0.4
0.5
T
C
= 25
C
I
B
= 0
10
20
30
40
50
5 mA
Base to emitter voltage V
BE
(V)
Collector Current I
C
(A)
0
Typical Transfer Characteristics
0.4
0.8
1.2
1.6
2.0
0.2
0.4
0.6
0.8
1.0
T
C
= 25
C
V
CE
= 5 V
1
3
30
100
10
Collector current I
C
(A)
DC current transfer ratio h
FE
0.001 0.003 0.01 0.03
0.1
0.3
1.0
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 5 V
T
C
= 25
C
25
C
75
C
0.01
0.03
1.0
0.3
1.0
3
10
Base current I
B
(A)
Collector to emitter saturation voltage
V
CE (sat)
(V)
0.001 0.003 0.01 0.03
0.1
0.3
1.0
Collector to Emitter Saturation
Voltage vs. Base Current
0.2 A
0.1 A
T
C
= 25
C
I
C
= 0.05 A
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0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(A)
0.001 0.003 0.01 0.03
0.1
0.3
1.0
Collector to emitter saturation voltage
V
CE (sat)
(V)
Base to emitter saturation voltage
V
BE (sat)
(V)
Saturation Voltage vs. Collector Current
V
BE (sat)
V
CE (sat)
l
C
= 5 l
B
T
C
= 25
C
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(A)
Switching time t (
s)
0.001 0.003 0.01 0.03
0.1
0.3
1.0
Switching Time vs. Collector Current
t
on
t
f
t
stg
I
C
= 5 I
B1
=
5 I
B2
V
CC
150 V
=
.
.
0.05
0.1
0.3
1.0
3
5
Case temperature T
C
(
C)
Switching time t (
s)
0
25
50
75
100
125
Switching Time vs. Case Temperature
t
on
t
f
t
stg
I
C
= 0.5 A
I
B1
=
I
B2
= 0.1 A
R
L
= 300
V
CC
150 V
=
.
.
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