2SC4050
Silicon NPN Epitaxial
Application
Low frequency amplifier, switching
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
2SC4050
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.1
A
V
CB
= 70 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.1
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
250
--
800
V
CE
= 12 V, I
C
= 2 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.1
V
I
C
= 10 mA, I
B
= 1 mA*
2
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.1
V
I
C
= 10 mA, I
B
= 1 mA*
2
Notes: 1. The 2SC4050 is grouped by h
FE
as follows.
2. Pluse test
Grade
D
E
Mark
KID
KIE
h
FE
250 to 500
400 to 800
2SC4050
3
150
100
50
Ambient Temperature Ta (
C)
0
150
100
50
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
4
8
12
16
20
Collector to Emitter Voltage V
CE
(V)
0
10
8
6
4
2
Typical Output Characteristics
Collector Current I
C
(mA)
18
16
14
12
10
8
6
4
2
A
I
B
= 0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
100
10
1.0
0.1
Typical Transfer Characteristics
Collector Current I
C
(mA)
V
CE
= 6 V
Ta = 75
C
25
25
1
10
3
30
100
Collector Current I
C
(mA)
1,000
300
100
30
10
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio h
FE
Ta = 75
C
V
CE
= 12 V
Pulse
25
25
2SC4050
4
1
10
3
30
100
Collector Current I
C
(mA)
1.0
0.3
0.1
0.03
0.01
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Pulse
I
C
= 10 I
B
Ta = 75
C
25
25
0.5
50
2
10
5
20
1.0
Collector Current I
C
(mA)
1,000
500
100
50
20
200
10
Gain Bandwidth Product vs. Collector
Current
Gain Bandwidth Product f
T
(MHz)
V
CE
= 6 V
Pulse
3
30
10
100
Collector to Base Voltage V
CB
(V)
100
30
10
3
0
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
I
E
= 0
f = 1 MHz
0.16
0 0.1
+ 0.10
0.06
3 0.4
+ 0.10
0.05
0.95
0.95
1.9
0.2
2.95
0.2
2.8
+ 0.2 0.6
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.3
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
--
Conforms
0.011 g
Unit: mm
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