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Электронный компонент: 2SC4501L

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2SC4501(L)/(S)
Silicon NPN Epitaxial
Application
High gain amplifier and medium speed switching
Outline
4
12
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
1
2, 4
3
2SC4501(L)/(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
3
A
Collector peak current
I
C (peak)
4
A
Collector power dissipation
P
C
*
1
10
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25C.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
--
--
V
I
C
= 1 mA, R
BE
= _
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 0.1 mA, I
C
= 0
Collector cutoff current
I
CEO
--
--
20
A
V
CB
= 24 V, R
BE
= _
DC current transfer ratio
h
FE
2000
--
50000
V
CE
= 3 V, I
C
= 1.5 A*
1
Collector to emitter saturation
voltage
V
CE (sat)
--
--
1.5
V
I
C
= 1.5 A, I
B
= 3 mA*
1
V
CE (sat)
--
--
2.0
I
C
= 3 A, I
B
= 30 mA*
1
Base to emitter saturation
voltage
V
BE (sat)
--
--
2.0
V
I
C
= 1.5 A, I
B
= 3 mA*
1
V
BE (sat)
--
--
3.5
I
C
= 3 A, I
B
= 30 mA*
1
Turn on time
t
on
--
0.4
--
s
I
C
= 1.5 A,
Turn off time
t
off
--
1.2
--
s
I
B1
= I
B2
= 3 mA,
Storage time
t
stg
--
0.8
--
s
V
CC
= 30 V
Note:
1. Pulse test.
2SC4501(L)/(S)
3
0
50
150
100
Case Temperature T
C
(
C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
4
8
12
0.01
0.03
0.1
0.3
1.0
10
3
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
1
3
10
30
100
Area of Safe Operation
I
C
(max)
i
C
(peak)
Ta = 25
C
1 Shot Pulse
PW =
10 ms
1 ms
DC Operation
(T
C
= 25
C)
0.4
0.8
1.2
1.6
2.0
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
1
2
3
4
5
Typical Output Characteristics
Ta
= 25
C
I
B
= 0
10
A
20
30
40
50
60
70
80
90
100
2SC4501(L)/(S)
4
1,000
3,000
10,000
30,000
100,000
Collector current I
C
(A)
DC current transfer ratio h
FE
0.03
0.1
0.3
1.0
3.0
DC Current Transfer Ratio
vs. Collector Current
V
CE
= 3 V
Ta
= 25
C
0.1
0.3
1.0
3
10
Collector current I
C
(A)
0.03
0.1
0.3
1.0
3.0
Collector to emitter saturation voltage
V
CE (sat)
(V)
Base to emitter saturation voltage
V
BE (sat)
(V)
Saturation Voltage vs. Collector Current
V
BE (sat)
V
CE (sat)
l
C
= 500 l
B
Ta = 25
C
2SC4501(L)/(S)
5
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1. This document may, wholly or partially, be subject to change without notice.
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of this document without Hitachi's permission.
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other reasons during operation of the user's unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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