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Электронный компонент: 2SC4791

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2SC4791
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 10 GHz Typ.
High gain, low noise figure
PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
1. Collector
2. Emitter
3. Base
4. Emitter
MPAK-4
1
4
3
2
2SC4791
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
8
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 15 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 8 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
CE
= 5 V, I
C
= 10 mA
Collector output capacitance
Cob
--
0.4
0.75
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
7.0
10.0
--
GHz
V
CE
= 5 V, I
C
= 10 mA
Power gain
PG
12.5
15.5
--
dB
V
CE
= 5 V, I
C
= 10 mA,
f = 900 MHz
Noise figure
NF
--
1.2
2.5
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is "YA".
Attention: This is electrostatic sensitive device.
2SC4791
3
150
100
50
Ambient Temperature Ta (
C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
200
160
120
80
40
0
0.1
Collector Current I (mA)
DC Current Transfer Ratio
vs. Collector Current
C
DC Current Transfer Ratio h
FE
0.2
0.5 1
2
5
10 20
50
V = 5V
CE
V = 1V
CE
12
1
2
5
10
20
50
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
10
8
6
4
2
0
V = 5 V
CE
V = 1 V
CE
Gain Bandwidth Product
vs. Collector Current
0.56
0.52
0.48
0.44
0.40
0.36
1
2
5
10
20
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.5
I = 0
E
f = 1 MHz
Collector Output Capacitance vs.
Collector to Base Voltage
2SC4791
4
20
16
12
8
4
0
0.3
Power Gain PG (dB)
Collector Current I (mA)
C
1
3
10
30
f = 900 MHz
V = 1V
CE
V = 5V
CE
Power Gain vs. Collector Current
5
4
3
2
1
0
Noise Figure NF (dB)
Collector Current I (mA)
C
0.3
1
3
10
30
f = 900 MHz
V = 5V
CE
V = 1V
CE
Noise Figure vs. Collector Current
2SC4791
5
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6
.8 1.0
2
3 4 5
(I = 5 mA)
(I = 10 mA)
C
C
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
1.5
10
S11 Parameter vs. Frequency
Scale: 4 / div.
0
30
60
90
120
150
180
150
90
60
30
120
(I = 5 mA)
(I = 10 mA)
C
C
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
S21 Parameter vs. Frequency
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
(I = 5 mA)
(I = 10 mA)
C
C
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
S12 Parameter vs. Frequency
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8 1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
10
(I = 5 mA)
(I = 10 mA)
C
C
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
1.5
S22 Parameter vs. Frequency
2SC4791
6
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8 1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
(I = 0.5 mA)
(I = 1 mA)
C
C
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
1.5
10
S11 Parameter vs. Frequency
Scale: 0.8 / div.
0
30
60
90
120
150
180
150
90
60
30
120
(I = 0.5 mA)
(I = 1 mA)
C
C
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
S21 Parameter vs. Frequency
Scale: 0.06 / div.
0
30
60
90
120
150
180
150
90
60
30
120
(I = 0.5 mA)
(I = 1 mA)
C
C
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
S12 Parameter vs. Frequency
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8 1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
10
(I = 0.5 mA)
(I = 1 mA)
C
C
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
1.5
S22 Parameter vs. Frequency
2SC4791
7
S Parameter (V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50
,
Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.859
15.9
13.192
165.5
0.016
82.3
0.974
9.3
200
0.790
30.6
12.225
151.9
0.031
73.9
0.914
17.5
300
0.700
44.0
10.967
139.9
0.043
68.2
0.841
24.2
400
0.618
54.8
9.802
130.2
0.053
64.0
0.771
29.2
500
0.543
64.7
8.686
122.4
0.061
61.4
0.710
32.5
600
0.477
73.3
7.761
116.0
0.068
59.8
0.660
34.8
700
0.421
80.1
6.955
110.2
0.074
58.9
0.619
36.7
800
0.369
86.3
6.316
105.5
0.080
58.7
0.584
38.2
900
0.331
92.8
5.748
101.0
0.086
58.1
0.557
39.3
1000
0.287
99.4
5.275
97.6
0.091
57.9
0.535
40.3
1100
0.226
104.8
4.869
94.1
0.097
57.9
0.517
41.2
1200
0.220
110.7
4.498
90.6
0.102
58.1
0.502
42.1
1300
0.200
110.7
4.169
88.2
0.107
58.4
0.492
43.1
1400
0.179
125.0
3.926
85.4
0.113
58.2
0.479
44.2
1500
0.159
131.7
3.698
83.0
0.119
58.2
0.471
44.9
1600
0.142
138.0
3.493
80.5
0.125
58.4
0.463
46.0
1700
0.126
147.6
3.311
78.1
0.130
58.5
0.456
47.2
1800
0.117
154.1
3.143
76.1
0.136
58.2
0.450
48.2
1900
0.109
166.9
3.008
74.0
0.142
58.0
0.445
49.3
2000
0.102
179.8
2.864
71.9
0.147
57.9
0.440
50.4
2SC4791
8
S Parameter (V
CE
= 5 V, I
C
= 10 mA, Z
O
= 50
,
Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.758
22.4
19.871
159.8
0.015
78.6
0.942
12.6
200
0.650
41.5
17.252
142.4
0.028
71.0
0.842
22.5
300
0.538
57.1
14.423
129.0
0.037
66.8
0.739
28.5
400
0.445
69.1
12.168
119.4
0.045
64.3
0.659
32.0
500
0.383
79.6
10.376
112.2
0.052
63.3
0.600
33.7
600
0.320
87.8
8.995
106.7
0.058
63.4
0.577
34.9
700
0.274
95.4
7.914
101.8
0.065
63.7
0.524
35.4
800
0.230
102.4
7.057
97.8
0.071
64.0
0.499
36.3
900
0.205
109.8
6.332
93.9
0.076
64.4
0.480
36.7
1000
0.174
116.9
5.778
91.0
0.083
64.5
0.466
37.4
1100
0.154
125.9
5.291
88.1
0.089
64.6
0.454
38.0
1200
0.131
135.1
4.862
85.4
0.096
64.7
0.444
38.7
1300
0.118
142.7
4.508
82.9
0.102
64.6
0.438
39.4
1400
0.108
154.7
4.226
80.8
0.109
64.5
0.431
40.4
1500
0.104
165.2
3.961
78.7
0.116
64.3
0.426
41.4
1600
0.093
178.6
3.718
76.4
0.122
64.1
0.420
42.4
1700
0.095
169.4
3.532
74.3
0.129
64.0
0.417
43.6
1800
0.094
158.4
3.347
72.4
0.135
63.4
0.413
44.8
1900
0.094
148.2
3.190
70.5
0.142
63.2
0.409
46.0
2000
0.101
136.0
3.036
68.6
0.148
63.0
0.406
47.3
2SC4791
9
S Parameter (V
CE
= 1 V, I
C
= 0.5 mA, Z
O
= 50
,
Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.983
6.6
1.757
174.0
0.023
85.8
0.995
4.1
200
0.976
13.1
1.723
167.3
0.047
80.7
0.990
8.2
300
0.961
19.6
1.741
160.2
0.071
76.4
0.980
12.3
400
0.938
26.2
1.734
154.0
0.093
71.9
0.966
16.4
500
0.920
32.5
1.666
147.6
0.093
67.6
0.950
20.1
600
0.903
38.6
1.629
142.6
0.133
63.4
0.932
23.9
700
0.868
44.6
1.584
136.2
0.151
59.9
0.913
27.3
800
0.836
50.4
1.564
130.6
0.166
56.2
0.891
30.6
900
0.819
56.1
1.520
125.3
0.180
52.8
0.869
33.8
1000
0.780
61.6
1.484
120.3
0.193
49.5
0.849
36.8
1100
0.749
66.9
1.434
115.3
0.204
46.7
0.828
39.6
1200
0.713
71.7
1.369
110.4
0.213
44.0
0.810
42.1
1300
0.687
77.0
1.322
107.2
0.221
41.4
0.794
44.8
1400
0.659
82.2
1.317
102.3
0.229
38.9
0.774
47.3
1500
0.629
86.9
1.282
98.5
0.234
36.7
0.757
49.7
1600
0.601
91.2
1.248
94.6
0.239
34.6
0.741
51.9
1700
0.578
96.7
1.215
91.0
0.243
32.4
0.726
54.2
1800
0.656
101.0
1.187
87.5
0.248
30.4
0.713
56.3
1900
0.532
106.3
1.155
84.4
0.249
28.9
0.699
58.4
2000
0.508
111.4
1.124
81.0
0.251
27.3
0.686
60.5
2SC4791
10
S Parameter (V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
,
Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.969
8.3
3.406
172.8
0.023
84.7
0.992
5.3
200
0.953
16.4
3.337
165.1
0.046
79.1
0.980
10.3
300
0.927
25.1
3.270
157.0
0.070
73.7
0.960
15.8
400
0.896
33.0
3.218
149.3
0.090
68.8
0.933
20.8
500
0.860
40.5
3.068
143.0
0.108
64.2
0.905
25.1
600
0.820
47.7
2.950
136.9
0.124
59.7
0.874
29.3
700
0.778
54.5
2.816
130.7
0.139
56.3
0.844
33.2
800
0.731
61.1
2.711
124.8
0.151
52.9
0.810
36.7
900
0.703
67.5
2.580
119.7
0.162
49.8
0.780
39.9
1000
0.657
73.8
2.470
114.8
0.171
46.9
0.752
42.8
1100
0.617
79.8
2.363
110.2
0.178
44.7
0.725
45.5
1200
0.575
84.8
2.229
105.3
0.185
42.5
0.703
47.7
1300
0.549
89.8
2.104
102.4
0.191
40.8
0.686
50.1
1400
0.516
96.2
2.053
97.9
0.196
38.8
0.660
52.5
1500
0.485
101.5
1.975
94.3
0.199
37.6
0.641
54.5
1600
0.456
106.7
1.891
90.9
0.203
36.2
0.623
56.4
1700
0.429
111.9
1.827
87.8
0.206
34.9
0.607
58.3
1800
0.412
115.9
1.751
84.6
0.209
33.7
0.593
60.3
1900
0.389
122.6
1.700
81.7
0.211
33.2
0.580
62.1
2000
0.368
128.0
1.645
78.8
0.212
32.4
0.567
64.1
0.16
0 0.1
+ 0.1
0.06
0.95
0.85
1.8
0.2
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.95
0.95
1.9
0.2
2.95
0.2
0.4
+ 0.1
0.05
0.6
+ 0.1
0.05
2.8
+ 0.2 0.6
0.3
0.4
+ 0.1
0.05
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
--
Conforms
0.013 g
Unit: mm
0.4
+ 0.1
0.05
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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