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Электронный компонент: 2SC4900

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2SC4900
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 9 GHz Typ
High gain, low noise figure
PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
1. Collector
2. Emitter
3. Base
4. Emitter
MPAK-4
1
4
3
2
2SC4900
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
9
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 12 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 9 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
CE
= 5 V, I
C
= 20 mA
Collector output capacitance
Cob
--
0.8
1.3
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
6.0
9.0
--
GHz
V
CE
= 5 V, I
C
= 20 mA
Power gain
PG
10.5
13.5
--
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Noise figure
NF
--
1.2
2.5
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is "YJ".
2SC4900
3
150
100
50
Ambient Temperature Ta (
C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
200
160
120
80
40
0.1
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
0.2
0.5
1
2
5
10 20
50
V = 5V
CE
0
DC Current Transfer Ratio
vs. Collector Current
12
10
8
6
4
2
1
2
5
10
20
50
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
V = 5 V
CE
0
Gain Bandwidth Product
vs. Collector Current
1.6
1.4
1.2
1.0
0.8
1
2
5
10
20
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.5
0.6
I = 0
f = 1 MHz
E
Collector Output Capacitance vs.
Collector to Base Voltage
2SC4900
4
20
16
12
8
4
1
2
5
10
20
Collector Current I (mA)
50
Power Gain PG (dB)
C
V = 5V
f = 900 MHz
CE
0
Power Gain vs. Collector Current
5
4
3
2
1
1
2
5
10
20
Collector Current I (mA)
50
Noise Figure NF (dB)
C
0
V = 5V
f = 900MHz
CE
Noise Figure vs. Collector Current
20
16
12
8
4
1
2
5
10
20
Collector Current I (mA)
50
S Parameter |S | (dB)
C
V = 5V
f = 1 GHz
CE
0
21
21
S21 Parameter vs. Collector Current
2SC4900
5
.2
.4
.6
1.0 1.5 2
4
3
5
1
1.5
2
3
4
5
10
10
5
4
3
2
1.5
1
.8
.6
.4
.2
0
.2
.4
.6
.8
10
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S11 Parameter vs. Frequency
90
60
120
30
0
30
60
90
120
150
180
150
Scale: 4 / div.
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S21 Parameter vs. Frequency
90
60
30
0
30
60
90
120
150
180
150
120
Scale: 0.1 / div.
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S12 Parameter vs. Frequency
.2
.4 .6 .8 1.0 1.5 2
3 4 5
10
5
4
3
2
1.5
1
.8
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
2
3
4
5
10
10
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S22 Parameter vs. Frequency
2SC4900
6
S Parameter (V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50
,
Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.678
67.0
11.09
134.6
0.0572
59.2
0.772
34.7
400
0.523
107.6
7.49
111.6
0.0802
48.8
0.556
47.8
600
0.453
135.8
5.43
98.3
0.0933
47.1
0.443
53.7
800
0.423
155.2
4.24
89.0
0.105
47.8
0.382
57.2
1000
0.407
172.1
3.47
81.6
0.118
49.7
0.348
60.2
1200
0.412
174.7
2.94
75.0
0.130
50.7
0.330
62.9
1400
0.414
163.5
2.54
69.2
0.145
51.9
0.318
66.5
1600
0.423
152.3
2.26
64.3
0.158
52.7
0.312
70.3
1800
0.438
143.2
2.05
59.2
0.174
53.3
0.307
74.4
2000
0.446
135.7
1.87
55.0
0.189
53.4
0.305
78.4
S Parameter (V
CE
= 5 V, I
C
= 20 mA, Z
O
= 50
,
Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.420
110.3
17.91
115.5
0.0381
59.7
0.502
54.1
400
0.362
148.9
10.13
98.4
0.0572
62.2
0.311
62.8
600
0.351
170.5
6.94
89.2
0.0766
64.7
0.240
66.1
800
0.352
175.2
5.29
82.9
0.0966
65.7
0.207
69.1
1000
0.361
162.7
4.27
77.1
0.117
65.8
0.189
71.6
1200
0.364
153.1
3.60
72.3
0.138
65.1
0.181
75.1
1400
0.373
143.9
3.12
67.9
0.158
64.0
0.178
79.3
1600
0.386
136.2
2.76
63.6
0.178
62.5
0.176
83.3
1800
0.396
128.2
2.49
59.4
0.199
61.3
0.177
87.5
2000
0.414
121.3
2.27
55.5
0.218
59.8
0.178
91.9
0.16
0 0.1
+ 0.1
0.06
0.95
0.85
1.8
0.2
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.95
0.95
1.9
0.2
2.95
0.2
0.4
+ 0.1
0.05
0.6
+ 0.1
0.05
2.8
+ 0.2 0.6
0.3
0.4
+ 0.1
0.05
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
--
Conforms
0.013 g
Unit: mm
0.4
+ 0.1
0.05
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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