Application
High frequency amplifier
Features
Excellent high frequency characteristics
f
T
= 1000 MHz typ
High breakdown voltage and low output
capacitance
V
CEO
= 100 V, Cob = 4.5 pF typ
Suitable for wide band video amplifier
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Rating
Unit
--------------------------------------------------------------------------------------
Collector to base voltage
V
CBO
100
V
--------------------------------------------------------------------------------------
Collector to emitter voltage
V
CEO
100
V
--------------------------------------------------------------------------------------
Emitter to base voltage
V
EBO
5
V
--------------------------------------------------------------------------------------
Collector current
I
C
0.2
A
--------------------------------------------------------------------------------------
Collector peak current
ic(peak)
0.5
A
--------------------------------------------------------------------------------------
Collector power dissipation
P
C
1.25
W
--------------------------------------------------------------------------------------
Collector power dissipation
P
C
*1
8
W
--------------------------------------------------------------------------------------
Junction temperature
Tj
150
C
--------------------------------------------------------------------------------------
Storage temperature
Tstg
55 to +150
C
--------------------------------------------------------------------------------------
Note: 1. Value at T
C
= 25C.
1
2
3
1. Emitter
2. Collector
3. Base
TO126FM
2SC5023
Silicon NPN Epitaxial
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
--------------------------------------------------------------------------------------
Collector to base
V
(BR)CBO
100
--
--
V
I
C
= 10 A,
breakdown voltage
I
E
= 0
--------------------------------------------------------------------------------------
Collector to emitter
V
(BR)CEO
100
--
--
V
I
C
= 1 mA,
breakdown voltage
R
BE
=
--------------------------------------------------------------------------------------
Collector cutoff current
I
CBO
--
--
1.0
A
V
CB
= 80 V,
I
E
= 0
--------------------------------------------------------------------------------------
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 3 V,
I
C
= 0
--------------------------------------------------------------------------------------
DC current
2SC5023B
h
FE
60
--
120
V
CE
= 10 V,
transfer ratio
------------------------------------------
I
C
= 10 mA
2SC5023C
h
FE
100
--
200
--------------------------------------------------------------------------------------
Base to emitter voltage
V
BE
--
--
1.0
V
V
CE
= 10 V,
I
C
= 10 mA
--------------------------------------------------------------------------------------
Collector to emitter
V
CE(sat)
--
--
1.0
V
IC = 100 mA,
saturation voltage
I
B
= 10 mA
--------------------------------------------------------------------------------------
Gain bandwidth product
f
T
800
1000
--
MHz
V
CE
= 20 V,
I
C
= 100 mA
--------------------------------------------------------------------------------------
Capacitor output capacitance
Cob
--
4.5
6.0
pF
V
CB
= 30 V,
I
E
= 0,
f = 1 MHz
--------------------------------------------------------------------------------------
See characteristic curves of 2SC4708.
2SC5023
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