ChipFind - документация

Электронный компонент: 2SC5141

Скачать:  PDF   ZIP
2SC5141
Silicon NPN Epitaxial
ADE-208-228A (Z)
2nd. Edition
Mar. 2001
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 5.8 GHz typ
High gain, low noise figure
PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz
Outline
1
2
3
1. Emitter
2. Base
3. Collector
SMPAK
Note:
Marking is "YN".
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2SC5141
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
12
V
Emitter to base voltage
V
EBO
2
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 15 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 12 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
CE
= 4 V, I
C
= 20 mA
Collector output capacitance
Cob
--
0.8
1.4
pF
V
CB
= 5 V, I
E
= 0,
f = 1 MHz
Gain bandwidth product
f
T
4.0
5.8
--
GHz
V
CE
= 4 V, I
C
= 20 mA
Power gain
PG
9.5
13.0
--
dB
V
CE
= 4 V, I
C
= 20 mA,
f = 900 MHz
Noise figure
NF
--
1.6
3.0
dB
V
CE
= 4 V, I
C
= 5 mA,
f = 900 MHz
2SC5141
3
160
120
80
40
0
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (mW)
50
100
150
200
Maximum Collector Dissipation Curve
200
160
120
80
40
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
0
DC Current Transfer Ratio vs.
Collector Current
0.1
V = 4 V
Pulse Test
CE
1
10
100
10
8
6
4
2
1
2
5
10
20
Collector Current I (mA)
50
C
0
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f (GHz)
T
V = 4V
CE
V = 1V
CE
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.1 0.2
0.5
1
2
5
10
20
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
1.6
1.2
0.8
0.4
0
I = 0
f = 1 MHz
E
2SC5141
4
20
16
12
8
4
Collector Current I (mA)
50
Power Gain PG (dB)
C
0
Power Gain vs. Collector Current
0.1 0.2
0.5
1
2
5
10 20
V = 4V
CE
V = 1V
CE
f = 900 MHz
10
8
6
4
2
Collector Current I (mA)
50
Noise Figure NF (dB)
C
0
Noise Figure vs. Collector Current
0.1 0.2
0.5
1
2
5
10 20
V = 4V
CE
V = 1V
CE
f = 900 MHz
2SC5141
5
Condition: V = 4 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
S11 Parameter vs. Frequency
1.0
Scale: 5 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 4 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S21 Parameter vs. Frequency
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 4 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S12 Parameter vs. Frequency
Condition: V = 4 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
S22 Parameter vs. Frequency
1.0