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Электронный компонент: 2SC5554

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2SC5554
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
ADE-208-692 (Z)
1st. Edition
Oct. 1998
Features
Super compact package;
(1.4
0.8
0.59mm)
Capable low voltage operation ;
(V
CE
= 1V)
Outline
MFPAK
1. Emitter
2. Base
3. Collector
1
3
2
Note: Marking is
"
YH-
"
.
2SC5554
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
9
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
20
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 15V , I
E
= 0
Collector cutoff current
I
CEO
--
--
1
mA
V
CE
= 9V , R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5V , I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
V
CE
= 1V , I
C
= 5mA
Collector output capacitance
Cob
--
0.6
0.9
pF
V
CB
= 1V , I
E
= 0
f = 1MHz
Gain bandwidth product
f
T
3.5
7
--
GHz
V
CE
= 1V , I
C
= 5mA
Power gain
PG
9
12
--
dB
V
CE
= 1V, I
C
= 5mA
f = 900MHz
Noise figure
NF
--
1.4
3
dB
V
CE
= 1V, I
C
= 5mA
f = 900MHz
2SC5554
3
160
120
80
40
0
50
100
150
200
10
0.1
1
10
1
2
5
10
20
50
100
0
2
4
6
8
10
100
200
0
1
20
100
Collector Power Dissipation Pc (mW)
Ambient Temperature Ta (
C)
Maximum Collector Dissipation Curve
Collector to Base Voltage V (V)
CB
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
Gain Bandwidth Product vs.
Collector Current
2
5
50
V = 1 V
CE
0.2
0.4
0.6
0.8
1.0
0
0.2
0.5
2
5
I = 0
f = 1MHz
E
V = 1 V
CE
2SC5554
4
1
5
10
50
100
10
1
10
100
3
5
0
1
20
100
Power Gain PG (dB)
Power Gain vs. Collector Current
S parameter |S | (dB)
Collector Current I (mA)
C
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2
5
50
4
8
12
16
20
0
2
5
20
50
0
4
8
12
16
20
Collector Current I (mA)
C
2
20
V = 1 V
CE
f = 900MHz
4
2
1
V = 1 V
CE
f = 900MHz
21
21
2
S Parameter vs. Collector Current
21
V = 1 V
CE
f = 1GHz
Collector Current I (mA)
C
2SC5554
5
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 4 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Condition :
100 to 2000 MHz (100 MHz step)
C
CE
V = 1 V , I = 5mA
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
CE
V = 1 V , I = 5mA
CE
V = 1 V , I = 5mA
CE
V = 1 V , I = 5mA
C
C
C
2SC5554
6
Sparameter (V
CE
= 1V, I
C
= 5mA, Zo = 50
)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.715
25.4
13.06
161.3
0.0279
76.6
0.947
16.1
200
0.647
50.1
11.47
144.2
0.0517
65.6
0.828
30.2
300
0.559
71.5
9.74
131.0
0.0681
58.4
0.697
40.4
400
0.501
88.2
8.28
121.3
0.0798
54.6
0.587
47.0
500
0.453
102.5
7.08
113.7
0.0882
52.4
0.501
51.3
600
0.416
114.8
6.16
108.1
0.0955
51.8
0.433
54.3
700
0.393
125.4
5.43
103.1
0.102
51.7
0.378
56.2
800
0.378
134.4
4.84
99.3
0.109
52.1
0.333
57.3
900
0.369
142.8
4.37
95.7
0.115
52.7
0.295
58.0
1000
0.357
149.5
3.99
92.5
0.122
53.5
0.266
58.4
1100
0.361
156.6
3.66
89.7
0.128
54.2
0.240
58.6
1200
0.358
162.2
3.38
87.2
0.135
55.1
0.217
58.5
1300
0.358
167.5
3.15
84.9
0.141
56.0
0.199
58.0
1400
0.362
172.5
2.96
82.7
0.148
56.9
0.180
58.0
1500
0.362
177.3
2.78
80.9
0.155
57.2
0.166
57.2
1600
0.369
178.8
2.64
78.6
0.163
58.1
0.151
56.9
1700
0.373
174.7
2.50
77.2
0.169
58.8
0.137
56.6
1800
0.377
171.1
2.38
75.1
0.177
59.2
0.126
56.4
1900
0.388
168.3
2.28
73.3
0.183
59.6
0.113
56.2
2000
0.395
165.3
2.18
71.8
0.191
60.1
0.102
55.7
2SC5554
7
Package Dimensions
0.9
0.1
1.4
0.05
1.2
0.05
0.8
0.1
3-0.2
+0.1
-0.05
0.2
0.2 0.45
0.45
(0.1)
(0.1)
0.6 MAX
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
MFPAK
--
--
0.0016 g
0.15
+0.1
0.05
As of January, 2001
Unit: mm
2SC5554
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright
Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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