ChipFind - документация

Электронный компонент: 2SC5555

Скачать:  PDF   ZIP
2SC5555
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
ADE-208-693 (Z)
1st. Edition
Nov. 1998
Features
Super compact package;
(1.4
0.8
0.59mm)
Capable low voltage operation ;
(V
CE
= 1V)
Outline
MFPAK
1. Emitter
2. Base
3. Collector
1
3
2
Note: Marking is
"
ZD-
"
.
2SC5555
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
8
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A , I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12V , I
E
= 0
Collector cutoff current
I
CEO
--
--
1
mA
V
CE
= 8V , R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5V , I
C
= 0
DC current transfer ratio
h
FE
50
100
160
V
V
CE
= 1V , I
C
= 5mA
Collector output capacitance
Cob
--
0.55
0.85
pF
V
CB
= 1V , I
E
= 0
f = 1MHz
Gain bandwidth product
f
T
6
9
--
GHz
V
CE
= 1V , I
C
= 5mA
Power gain
PG
11
14
--
dB
V
CE
= 1V, I
C
= 5mA
f = 900MHz
Noise figure
NF
--
1.1
2.0
dB
V
CE
= 1V, I
C
= 5mA
f = 900MHz
2SC5555
3
160
120
80
40
0
50
100
150
200
10
0.1
1
10
1
2
5
10
20
50
100
0
4
8
12
16
20
100
200
0
1
20
100
Collector Power Dissipation Pc (mW)
Ambient Temperature Ta (
C)
Maximum Collector Dissipation Curve
Collector to Base Voltage V (V)
CB
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
Gain Bandwidth Product vs.
Collector Current
2
5
50
V = 1 V
CE
0.2
0.4
0.6
0.8
1.0
0
0.2
0.5
2
5
I = 0
f = 1MHz
E
V = 1 V
CE
2SC5555
4
1
5
10
50
100
10
1
10
100
3
5
0
1
20
100
Power Gain PG (dB)
Power Gain vs. Collector Current
Collector Current I (mA)
C
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2
5
50
4
8
12
16
20
0
2
5
20
50
0
4
8
12
16
20
Collector Current I (mA)
C
2
20
V = 1 V
CE
f = 900MHz
4
2
1
V = 1 V
CE
f = 900MHz
21
S Parameter |S | (dB)
21
2
S Parameter vs. Collector Current
21
V = 1 V
CE
f = 1GHz
Collector Current I (mA)
C
2SC5555
5
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 4 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Condition :
100 to 2000 MHz (100 MHz step)
C
CE
V = 1 V , I = 5mA
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
CE
V = 1 V , I = 5mA
CE
V = 1 V , I = 5mA
CE
V = 1 V , I = 5mA
C
C
C
2SC5555
6
Sparameter (V
CE
= 1V, I
C
= 5mA, Zo = 50
)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.734
21.4
13.62
163.7
0.0220
78.7
0.956
13.4
200
0.676
41.9
12.34
148.7
0.0421
69.3
0.865
25.5
300
0.598
59.8
10.79
136.0
0.0572
61.9
0.753
34.7
400
0.530
75.6
9.38
126.5
0.0678
57.2
0.652
41.0
500
0.471
88.8
8.18
118.9
0.0756
55.0
0.568
45.4
600
0.429
100.8
7.19
112.9
0.0821
53.9
0.498
48.3
700
0.395
110.8
6.40
107.8
0.0881
53.4
0.442
50.2
800
0.370
120.6
5.74
103.5
0.0940
53.4
0.395
51.7
900
0.349
130.0
5.20
100.1
0.0990
54.0
0.355
52.3
1000
0.336
136.4
4.74
96.9
0.104
54.6
0.323
52.7
1100
0.332
144.1
4.39
93.9
0.109
55.5
0.294
52.9
1200
0.327
151.6
4.05
91.4
0.115
56.4
0.270
52.8
1300
0.322
157.0
3.77
89.1
0.120
57.4
0.250
52.2
1400
0.325
162.9
3.54
86.9
0.125
58.0
0.230
52.6
1500
0.322
168.0
3.32
84.9
0.130
58.8
0.215
52.0
1600
0.331
172.6
3.14
82.7
0.138
59.8
0.200
51.5
1700
0.338
177.0
2.97
80.9
0.143
60.3
0.185
51.5
1800
0.337
179.0
2.84
79.4
0.149
61.5
0.171
51.2
1900
0.341
175.4
2.71
77.9
0.154
61.7
0.158
51.1
2000
0.358
170.8
2.59
76.0
0.161
62.4
0.147
50.9
2SC5555
7
Package Dimensions
Unit: mm
0.15
+ 0.1
0.05
0.45
0.45
0.9
0.2
0.8
0.2
0.6 max.
1.4
0.05
0.2
+ 0.1
0.05
0.2
+ 0.1
0.05
0.2
+ 0.1
0.05
1.2
0.05
3
2
1
Hitachi Code
EIAJ
JEDEC
MFPAK
--
--
0.1
0.1
0.6 max.
0.1
0.1
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to: