2SC5623
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
ADE-208-977 (Z)
1st. Edition
Nov. 2000
Features
High gain bandwidth product
f
T
= 26 GHz typ.
High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
1. Emitter
2. Collector
3. Emitter
4. Base
1
4
3
2
Note: Marking is "WH-".
2SC5623
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
10
V
Collector to emitter voltage
V
CEO
3.5
V
Emitter to base voltage
V
EBO
1
V
Collector current
I
C
12
mA
Collector power dissipation
Pc
50
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
10
--
--
V
I
C
= 10
A , I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 8 V , I
E
= 0
Collector cutoff current
I
CEO
--
--
1
A
V
CE
= 3 V , R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1 V , I
C
= 0
DC current transfer ratio
h
FE
60
100
140
V
V
CE
= 2 V , I
C
= 10 mA
Collector output capacitance
Cob
--
0.15
0.4
pF
V
CB
= 2 V , I
E
= 0
f = 1 MHz
Gain bandwidth product
f
T
23
26
--
GHz
V
CE
= 2 V , I
C
= 10 mA
f = 2 GHz
Power gain
PG
14
18
--
dB
V
CE
= 2 V , I
C
= 10 mA
f = 1.8 GHz
Noise figure
NF
--
1.8
2.3
dB
V
CE
= 2 V , I
C
= 3 mA
f = 1.8 GHz
2SC5623
3
Main Characteristics
200
150
100
50
0
50
100
150
200
10
0.1
1
10
1
2
5
10
20
50
100
0
10
20
30
40
50
100
200
0
1
20
100
Collector Power Dissipatio Pc (mW)
Ambient Temperature Ta (
C)
Collector Power Dissipation Curve
Collector to Base Voltage V (V)
CB
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
DC Current Transfet Ratio vs.
Collector Current
Collector Current I (mA)
C
Gain Bandwidth Prodfuct f (GHz)
T
Gain Bandwidth Product vs.
Collector Current
2
5
50
V = 2 V
CE
0.2
0.4
0.6
0.8
1.0
0
0.2
0.5
2
5
I = 0
f = 1MHz
E
V = 2 V
CE
2SC5623
4
1
5
10
50
100
10
1
10
100
3
5
0
1
20
100
Power Gain PG (dB)
Power Gain vs. Collector Current
S Parameter |S | (dB)
Collector Current I (mA)
C
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2
5
50
4
8
12
16
20
0
2
5
20
50
0
4
8
12
16
20
Collector Current I (mA)
C
2
20
4
2
1
21
21
2
S Parameter vs. Collector Current
21
Collector Current I (mA)
C
f = 1.8GHz
V = 2 V
CE
V = 2 V
CE
f = 1.8GHz
V = 2 V
CE
f = 2GHz
2SC5623
5
10
5
4
3
2
1.5
1
.8
-
2
-
3
-
4
-
5
-
10
.6
.4
.2
0
-
.2
-
.4
-
.6
-
.8
-
1
-
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 6 / div.
0
30
60
90
120
150
180
-
150
-
90
-
60
-
30
-
120
Scale: 0.02 / div.
0
30
60
90
120
150
180
-
150
-
90
-
60
-
30
-
120
10
5
4
3
2
1.5
1
.8
-
2
-
3
-
4
-
5
-
10
.6
.4
.2
0
-
.2
-
.4
-
.6
-
.8
-
1
-
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Condition :
100 to 3000 MHz (100 MHz step)
C
CE
V = 2 V , I = 10 mA
Condition :
100 to 3000 MHz (100 MHz step)
Condition :
100 to 3000 MHz (100 MHz step)
Condition :
100 to 3000 MHz (100 MHz step)
S11 Parameter vs. Frequency
S21 Paramter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
CE
V = 2 V , I = 10 mA
CE
V = 2 V , I = 10 mA
CE
V = 2 V , I = 10 mA
C
C
C
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