2SC5702
Silicon NPN Epitaxial
High Frequency Amplifier / Oscillator
ADE-208-1414 (Z)
1st. Edition
Mar. 2001
Features
High gain bandwidth product
f
T
= 8 GHz typ.
High power gain and low noise figure ;
PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz
Outline
MFPAK
1. Emitter
2. Base
3. Collector
1
3
2
Note:
Marking is "ZS-".
2SC5702
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
6
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
18.5
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
1
A
V
CB
= 10 V, I
E
= 0
Collector cutoff current
I
CEO
1
mA
V
CE
= 4 V, R
BE
=
Emitter cutoff current
I
EBO
10
mA
V
EB
= 1.5V, I
C
= 0
DC current transfer ratio
h
FE
80
120
160
V
V
CE
= 1 V, I
C
= 5 mA
Collector output capacitance
Cob
0.85
1.2
pF
V
CB
= 1 V, I
E
= 0
f = 1 MHz
Gain bandwidth product
f
T
6.5
8.0
GHz
V
CE
= 1 V, I
C
= 5 mA
f = 1 MHz
Power gain
PG
11
13
dB
V
CE
= 1 V, I
C
= 5 mA
f = 900 MHz
Noise figure
NF
1.05
1.9
dB
V
CE
= 1 V, I
C
= 5 mA
f = 900 MHz
2SC5702
3
160
120
80
40
0
50
100
150
200
Maximum Collector Dissipation Curve
Collector Power Dissipation Pc (mW)
Ambient Temperature Ta (
C)
1
2
5
10
20
50
100
0
40
80
120
160
200
DC Current Transfet Ratio vs.
Collector Current
DC Current Transfer Ratio h
FE
Collector Current I
C
(mA)
Collecter to Emitter Voltege V
CE
(V)
Collecter Voltage vs.
Collecter to Emitter Voltege
Collecter Voltege Ic (mA)
Base to Emitter Voltage V
BE
(V)
Collecter Voltage vs.
Base to Emitter Voltege
Collecter Voltege Ic (mA)
50
40
30
20
10
0
0
0.4
0.8
1.2
0.2
0.6
1.0
2
5
0
20
30
40
50
10
1
3
4
I
B
=10
A
60
A
110
A
160
A
210
A
260
A
310
A
360
A
410
A
460
A
V
CE
= 1 V
2SC5702
4
0
1
10
0.6
0.8
1.0
1.2
1.4
0.4
0.1
1
10
0
0.2
0.4
0.6
0.8
1.0
I
E
= 0
f = 1 MHz
Collector Input Capacitance vs.
Emitter To Base Voltage
Input Capacitance Cib (pF)
Emitter to Base Voltage V
EB
(V)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V
CB
(V)
Reverse Transfer capacitance vs.
Collector To Base Voltage
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage V
CB
(V)
0
1
10
0.2
0.4
0.6
0.8
1.0
0
E: Guard pin
f = 1 MHz
f = 1 MHz
2SC5702
5
1
2
5
10
20
50
100
0
4
8
12
16
20
Collector Current Ic (mA)
Power Gain PG (dB)
Power Gain vs. Collector Current
1
2
5
10
20
50
100
0.0
1.0
2.0
3.0
4.0
5.0
Collector Current Ic (mA)
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2 V
1 V
V
CE
= 3 V
V
CE
= 3 V
2 V
1 V
f = 900 MHz
f = 900 MHz
1
2
5
10
20
50
100
0
4
8
12
16
20
V
CE
= 1 V
Gain Bandwidth Product vs. Collector Currnet
Gain Bandwidth Prodfuct f (GHz)
T
Collector Current Ic (mA)
1
2
5
10
20
50
100
0
4
8
12
16
20
V
CE
= 1 V
f = 1 MHz
S
21
Parameter vs. Collector Current
S
21
Parameter |S
21
| (dB)
Collector Current Ic (mA)
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