This data sheet contains tentative specification for new product development. It may partially be subject to
change without notice.
2SC5773
Silicon NPN Epitaxial
UHF / VHF wide band amplifier
ADE-208-1391(Z)
Preliminary 1st. Edition
Mar. 2001
Features
High gain bandwidth product
f
T
= 10.8 GHz typ.
High power gain and low noise figure ;
PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
Note: Marking is "JR-".
2SC5773
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
6
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
80
mA
Collector power dissipation
Pc
700*
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
* When using aluminium ceramic board (25 x 60 x 0.7 mm)
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12 V, I
E
= 0
Collector cutoff current
I
CEO
--
--
1
mA
V
CE
= 6 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
80
120
160
V
V
CE
= 5 V, I
C
= 50 mA
Collector output capacitance
Cob
--
1.25
1.8
pF
V
CB
= 5 V, I
E
= 0
f = 1 MHz
Reverse transfer capacitance Cre
--
0.98
--
pF
V
CB
= 5 V, I
E
= 0
f = 1 MHz
Gain bandwidth product
f
T
8
10.8
--
GHz
V
CE
= 5 V, I
C
= 50 mA
f = 1 GHz
S
21
parameter
|S
21
|
2
--
11
--
dB
V
CE
= 5 V, I
C
= 50 mA
f = 1 GHz
Power gain
PG
9
11.9
--
dB
V
CE
= 5 V, I
C
= 50 mA
f = 900 MHz
Noise figure
NF
--
1.1
1.9
dB
V
CE
= 5 V, I
C
= 5 mA
f = 900 MHz
2SC5773
3
1000
800
400
200
0
50
100
150
200
10
0.1
1
10
1
2
5
10
20
50
100
0
4
8
12
16
20
100
200
0
1
20
100
2
5
50
V = 5 V
CE
0.8
1.6
2.4
3.2
4.0
0
0.2
0.5
2
5
I = 0
f = 1 MHz
E
3 V
3 V
V = 5 V
CE
Collector Power Dissipation Curve
When using aluminum ceramic board
S = 25 mm X 60 mm, t = 0.7 mm
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (mW)
DC Current Transfet Ratio vs.
Collector Current
DC Current Transfer Ratio h
FE
Collector Current I
C
(mA)
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Prodfuct f
T
(GHz)
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I
C
(mA)
2SC5773
4
1
5
10
50
100
10
1
10
100
3
5
0
1
20
100
2
5
50
4
8
12
16
20
0
2
5
20
50
0
4
8
12
16
20
2
20
4
2
1
f = 900 MHz
V = 5 V
CE
3 V
f = 1 GHz
V = 5 V
CE
3 V
f = 900 MHz
V = 3 V
CE
5 V
Power Gain PG (dB)
Power Gain vs. Collector Current
Collector Current I
C
(mA)
Noise Figure vs. Collector Current
Noise Figure NF (dB)
Collector Current I
C
(mA)
S
21
Parameter |S
21
|
2
(dB)
S
21
Parameter vs. Collector Current
Collector Current I
C
(mA)
2SC5773
5
10
5
4
3
2
1.5
1
.8
-2
-3
-4
-5
-10
.6
.4
.2
0
-.2
-.4
-.6
-.8
-1
-1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
0
30
60
90
120
150
180
-150
-90
-60
-30
-120
30
60
90
120
150
180
-150
-90
-60
-30
-120
10
5
4
3
2
1.5
1
.8
-2
-3
-4
-5
-10
.6
.4
.2
0
-.2
-.4
-.6
-.8
-1
-1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 8 / div.
Scale: 0.08 / div.
0
S11 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
S21 Paramter vs. Frequency
Condition: V
CE
= 3 V, Z
O
= 50
100 to 2000 MHz (100 MHz Step)
( I
C
= 50 mA)
( I
C
= 30 mA)
( I
C
= 10 mA)
Condition: V
CE
= 3 V, Z
O
= 50
100 to 2000 MHz (100 MHz Step)
( I
C
= 50 mA)
( I
C
= 30 mA)
( I
C
= 10 mA)
Condition: V
CE
= 3 V, Z
O
= 50
100 to 2000 MHz (100 MHz Step)
( I
C
= 50 mA)
( I
C
= 30 mA)
( I
C
= 10 mA)
Condition: V
CE
= 3 V, Z
O
= 50
100 ~ 2000 MHz (100 MHz Step)
( I
C
= 50 mA)
( I
C
= 30 mA)
( I
C
= 10 mA)
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