2SC5827
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE2081464(Z)
Rev.0
Nov. 2001
Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
1. Emitter
2. Base
3. Collector
1
3
2
Note: Marking is "WW".
2SC5827
Rev.0, Nov. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
5.5
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
80
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150
C
Electrical Characteristics
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Collector cutoff current
I
CEO
1
A
V
CE
= 5.5 V, R
BE
= Infinite
Emitter cutoff current
I
EBO
0.1
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
100
120
150
V
CE
= 1 V, I
C
= 5 mA
Collector output capacitance
C
ob
0.85
1.15
pF
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
1.5
4.5
GHz
V
CE
= 1 V, I
C
= 5 mA
Power gain
PG
10.5
13.5
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
Noise figure
NF
1.1
1.8
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
2SC5827
Rev.0, Nov. 2001, page 3 of 10
100
80
60
40
20
0
50
100
150
200
250
Collector Power Dissipation P
C
(mW)
Ambient Temperature Ta (
C)
Collector Power Dissipation Curve
20
16
12
8
4
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
200
100
0
0.1
1.0
10
100
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
I
B
= 20
A
40
A
60
A
80 A
100 A
120 A
140 A
160 A
V
CE
= 1 V
VCE = 1 V
2SC5827
Rev.0, Nov. 2001, page 4 of 10
2.0
1.6
1.2
0.8
0.4
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance Cob (pF)
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage V
CB
(V)
Re
v
erse
T
r
ansf
er Capacitance C
re
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance vs.
Collector to Base Voltage
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
S
21
P
a
r
ameter |S
21
|
2
(dB)
Gain Bandwidth Product vs.
Collector Current
S
21
Parameter vs. Collector Current
V
CE
= 1 V
f = 1 GHz
V
CE
= 1 V
f = 1 GHz
I
E
= 0
f = 1 MHz
Emitter ground
f = 1 MHz
2SC5827
Rev.0, Nov. 2001, page 5 of 10
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
P
o
w
er Gain PG (dB)
5
4
3
2
1
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Noise Figure NF (dB)
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
V
CE
= 1 V
f = 900 MHz
V
CE
= 1 V
f = 900 MHz
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