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Электронный компонент: 2SC5849

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2SC5849
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE-208-1469 (Z)
Rev. 0
Nov. 2001
Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
1. Emitter
2. Base
3. Collector
1
3
2
Note: Marking is "WY".
2SC5849
Rev.0, Nov. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
6.0
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150
C
Electrical Characteristics
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Collector cutoff current
I
CEO
0.1
A
V
CE
= 6.0 V, R
BE
= Infinite
Emitter cutoff current
I
EBO
0.1
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
90
110
140
V
CE
= 1 V, I
C
= 5 mA
Reverse transfer capacitance
C
re
0.5
pF
V
CE
= 1 V, Emitter ground,
f = 1 MHz
Collector output capacitance
C
ob
0.85
1.15
pF
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
(1)
1.0
4.0
GHz
V
CE
= 1 V, I
C
= 5 mA
Gain bandwidth product
f
T
(2)
9.0
GHz
V
CE
= 1 V, I
C
= 30 mA
Power gain
PG
10
13
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
Noise figure
NF
1.1
1.8
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
2SC5849
Rev.0, Nov. 2001, page 3 of 10
100
80
60
40
20
0
50
100
150
200
250
Collector Power Dissipation P
C
(mW)
Ambient Temperature Ta (C)
Collector Power Dissipation Curve
20
16
12
8
4
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
200
100
0
0.1
1.0
10
100
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
I
B
= 20
A
40
A
60
A
80
A
100
A
120 A
140 A
160 A
V
CE
= 1 V
VCE = 1 V
0
180 A
2SC5849
Rev.0, Nov. 2001, page 4 of 10
2.0
1.6
1.2
0.8
0.4
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance Cob (pF)
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage V
CB
(V)
Re
v
e
rse
T
r
ansf
er Capacitance C
re
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance vs.
Collector to Base Voltage
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
S
21
P
a
r
a
meter |S
21
|
2
(dB)
Gain Bandwidth Product vs.
Collector Current
S
21
Parameter vs. Collector Current
V
CE
= 1 V
f = 1 GHz
V
CE
= 1 V
f = 1 GHz
I
E
= 0
f = 1 MHz
Emitter ground
f = 1 MHz
2SC5849
Rev.0, Nov. 2001, page 5 of 10
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
P
o
w
er Gain PG (dB)
5
4
3
2
1
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Noise Figure NF (dB)
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
V
CE
= 1 V
f = 900 MHz
V
CE
= 1 V
f = 900 MHz
2SC5849
Rev.0, Nov. 2001, page 6 of 10
Scale: 8 / div.
S
11
Parameter vs. Frequency
S
21
Parameter vs. Frequency
Test conditions: V
CE
= 1 V , Z
O
= 50
100 to 2000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
Test conditions: V
CE
= 1 V , Z
O
= 50
100 to 2000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
S
12
Parameter vs. Frequency
Test conditions: V
CE
= 1 V , Z
O
= 50
100 to 2000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
S
22
Parameter vs. Frequency
Test conditions: V
CE
= 1 V , Z
O
= 50
100 to 2000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
Scale: 0.04 / div.
0
30
30
60
90
120
150
180
60
90
120
150
0
30
30
60
90
120
150
180
60
90
120
150
.2
.4
.6
1
2
5
10
5
3
2
1.5
10
5
3
2
1.5
1
.8
.6
.4
.2
0
.2
.4
.6
.8
1
4
4
3 4
.8
1.5
.2
.4
.6
1
2
5
10
5
3
2
1.5
10
5
3
2
1.5
1
.8
.6
.4
.2
0
.2
.4
.6
.8
1
4
4
3 4
.8
1.5
2SC5849
Rev.0, Nov. 2001, page 7 of 10
S Parameter
(V
CE
= 1 V, I
C
= 5 mA, Z
O
= 50
)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.807
40.6
14.95
154.2
0.030
69.3
0.913
19.1
200
0.737
73.7
12.30
135.0
0.049
55.5
0.768
31.8
300
0.675
98.4
9.86
121.2
0.061
47.8
0.633
38.8
400
0.642
115.9
8.03
111.9
0.067
44.0
0.544
42.3
500
0.624
127.9
6.72
105.0
0.071
42.8
0.484
44.4
600
0.611
138.1
5.75
99.4
0.074
43.2
0.442
45.2
700
0.604
145.4
5.02
95.0
0.078
43.8
0.412
46.0
800
0.599
151.6
4.45
90.9
0.081
45.4
0.390
46.7
900
0.595
157.2
3.98
87.6
0.084
47.2
0.373
47.6
1000
0.594
161.2
3.62
84.5
0.087
49.3
0.362
48.4
1100
0.591
165.5
3.33
81.8
0.091
51.3
0.354
49.5
1200
0.592
168.4
3.06
79.0
0.095
53.6
0.347
50.7
1300
0.591
171.5
2.86
76.4
0.099
55.3
0.341
52.0
1400
0.592
174.8
2.66
74.1
0.103
57.2
0.340
53.5
1500
0.592
176.8
2.51
72.0
0.108
59.1
0.335
54.8
1600
0.589
180.0
2.35
69.7
0.113
61.1
0.337
56.3
1700
0.594
177.7
2.23
67.8
0.119
62.8
0.334
58.3
1800
0.594
175.7
2.13
65.7
0.126
64.7
0.335
60.0
1900
0.596
173.9
2.03
63.7
0.132
65.7
0.335
62.0
2000
0.598
171.3
1.94
61.9
0.139
66.9
0.335
64.0
2SC5849
Rev.0, Nov. 2001, page 8 of 10
(V
CE
= 1 V, I
C
= 20 mA, Z
O
= 50
)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.504
90.3
33.79
132.5
0.021
61.4
0.674
44.5
200
0.490
128.6
21.25
112.9
0.030
57.6
0.431
61.0
300
0.488
146.2
14.78
103.3
0.037
60.2
0.309
67.9
400
0.487
156.3
11.31
97.4
0.045
63.7
0.247
71.1
500
0.492
162.8
9.13
93.3
0.053
66.0
0.210
73.2
600
0.492
167.0
7.65
90.0
0.062
68.0
0.187
75.1
700
0.497
170.8
6.58
87.2
0.070
69.6
0.171
76.7
800
0.492
174.1
5.78
84.4
0.079
70.4
0.160
78.2
900
0.496
177.0
5.13
82.6
0.088
71.2
0.152
79.9
1000
0.498
178.4
4.65
80.2
0.097
71.7
0.147
81.4
1100
0.500
178.2
4.24
78.3
0.106
72.0
0.145
83.2
1200
0.503
177.5
3.90
76.1
0.116
72.4
0.143
85.1
1300
0.503
175.2
3.63
74.3
0.123
72.1
0.143
87.2
1400
0.506
173.7
3.38
72.6
0.132
72.4
0.144
88.8
1500
0.503
172.0
3.17
70.9
0.141
72.3
0.144
91.2
1600
0.507
170.6
2.99
69.4
0.150
72.1
0.146
92.8
1700
0.516
168.9
2.82
67.7
0.159
72.0
0.148
95.0
1800
0.511
167.3
2.68
66.0
0.169
71.7
0.151
97.0
1900
0.515
165.6
2.56
64.6
0.177
71.4
0.154
99.0
2000
0.514
165.1
2.45
63.0
0.187
70.8
0.158
100.8
2SC5849
Rev.0, Nov. 2001, page 9 of 10
Package Dimensions
0.9 0.1
1.4 0.05
1.2 0.05
0.8 0.1
3-0.2
+0.1
0.05
0.2
0.2 0.45
0.45
(0.1)
(0.1)
0.6 MAX
Hitachi Code
JEDEC
JEITA
Mass (reference value)
MFPAK
--
--
0.0016 g
0.15
+0.1
0.05
As of July, 2001
Unit: mm
2SC5849
Rev.0, Nov. 2001, page 10 of 10
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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