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Электронный компонент: 2SD2300

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2SD2300
Silicon NPN Triple Diffused
Application
CTV horizontal deflection output
Features
High breakdown voltage
V
CBO
= 1500 V
Built-in damper diode type
Outline
TO-3PFM
1
2
3
1. Base
2. Collector
3. Emitter
I
D
1
2
3
2SD2300
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CES
1500
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
5
A
Collector peak current
I
C(peak)
6
A
Collector surge current
I
C(surge)
16
A
Collector power dissipation
P
C
*
1
50
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
C to E diode forward current
I
D
6
A
Note:
1. Value at T
C
= 25C.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 350 mA, I
C
= 0
Collector cutoff current
I
CES
--
--
500
A
V
CE
= 1500 V, R
BE
= 0
DC current transfer ratio
h
FE
--
--
20
V
CE
= 5 V, I
C
= 1 A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
5
V
I
C
= 4.5 A, I
B
= 1.2 A
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
I
C
= 4.5 A, I
B
= 1.2 A
C to E diode forward voltage
V
ECF
--
--
3.0
V
I
F
= 6 A
Fall time
t
f
--
--
1.0
s
I
CP
= 4 A, I
B1
= 0.8 A,
I
B2
1.5 A
2SD2300
3
Area of Safe Operation
20
16
12
8
4
0
400
f = 15.75 kHz
Ta = 25
C
(100 V, 16 A)
(800 V, 3 A)
0.5 mA
800
1,200
1,600
2,000
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
For picture tube arcing
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature T
C
(
C)
Collector power dissipation P
C
(W)
Typical Output Characteristecs
5
4
3
2
1
0
2
4
Collector to emitter voltage V
CE
(V)
10
8
6
Collector current I
C
(A)
T
C
= 25
C
I
B
= 0
0.1 A
0.2 A
0.3 A
0.4 A
0.5 A
0.6 A
0.7 A
1 A
0.8 A
0.9 A
50
20
10
5
2
1
0.1
DC current transfer ratio h
FE
0.2
0.5
1.0
2
Collector current I
C
(A)
5
DC Current Transfer Ratio vs.
Collector Current
25
C
V
CE
= 5 V
Pulse
75
C
T
C
= 25
C
2SD2300
4
25
C
3
2
1.0
0.2
0.5
0.05
0.1
0.1
0.2
0.5
1.0
5
3
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
= 3 I
B
Pulse
25
C
T
C
= 75
C
5
2
1.0
0.2
0.5
0.1
0.2
5
2
1.0
0.5
Base to Emitter Saturation Voltage
vs. Collector Current
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
= 3 I
B
Pulse
T
C
= 25
C
25
C
75
C
10
8
6
4
2
0
0.2
0.1
1.0
0.5
2
5
Collector to Emitter Saturation Voltage
vs. Base Current
Base current I
B
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
T
C
= 25
C
Pulse
I
C
= 2 A 4 A 5 A
2SD2300
5
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of this document without Hitachi's permission.
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other reasons during operation of the user's unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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