2SD2423
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
1.5
A
Collector power dissipation
P
C
*
1
1
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Collector to emitter diode forward current
I
D
1.5
A
Note:
1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
50
--
70
V
I
C
= 100
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
--
--
V
I
C
= 10 mA, R
BE
=
Collector to emitter sustaining
voltage
V
CEO(sus)
50
--
70
V
I
C
= 1.5 A, R
BE
=
,
L = 10 mH*
1
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CEO
--
--
10
A
V
CE
= 40 V, R
BE
=
DC current transfer ratio
h
FE
2000
--
10000
V
CE
= 3 V, I
C
= 1 A*
1
Collector to emitter saturation
voltage
V
CE(sat)1
--
--
1.5
V
I
C
= 1 A, I
B
= 1 mA*
1
Collector to emitter saturation
voltage
V
CE(sat)2
--
--
2.3
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
Base to emitter saturation
voltage
V
BE(sat)1
--
--
2.0
V
I
C
= 1 A, I
B
= 1 mA*
1
Base to emitter saturation
voltage
V
BE(sat)2
--
--
2.5
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
Emitter to collector diode
forward voltage
V
D
--
--
3.5
V
I
D
= 1.5 A*
1
Notes: 1. Pulse test
2. Marking is "GT".
Cautions
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contact Hitachi's sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
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