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Электронный компонент: 6AM13

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6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET
Array
ADE-208-1217 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
Low on-resistance
N-channel: R
DS(on)
0.075 , V
GS
= 10 V, I
D
= 5 A
P-channel: R
DS(on)
0.12 , V
GS
= 10 V, I
D
= 5 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for H-bridged motor driver
6AM13
2
Outline
SP-12TA
1.
2, 8, 9
3, 7, 10.
4, 6, 11.
5, 12.
1
2
3
4
5
6
7
8
9
11
10
12
5
S
12
S
11
G
6
G
9
G
8
G
S
1
4 G
Pch
Nch
2 G
D 10
D 7
D 3
N-ch Source
N-ch Gate
N-ch Drain
P-ch Drain
P-ch Gate
P-ch Source
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item
Symbol
Nch
Pch
Unit
Drain to source voltage
V
DSS
60
60
V
Gate to source voltage
V
GSS
20
20
V
Drain current
I
D
10
10
A
Drain peak current
I
D(pulse)
*
1
40
40
A
Body to drain diode reverse drain current
I
DR
10
10
A
Channel dissipation
Pch (Tc = 25C)*
2
42
W
Channel dissipation
Pch*
2
4.8
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10 s, duty cycle
1%
2. 6 devices operation
6AM13
3
Electrical Characteristics (Ta = 25C) (1 Unit)
N channel
P channel
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
V
(BR)DSS
60
--
--
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source
breakdown voltage
V
(BR)GSS
20
--
--
20
--
--
V
I
G
= 100 A, V
DS
= 0
Gate to source leak
current
I
GSS
--
--
10
--
--
10
A
V
GS
= 16 V, V
DS
= 0
Zero gate voltage drain
current
I
DSS
--
--
250
--
--
250
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff
voltage
V
GS(off)
1.0
--
2.0
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source
R
DS(on)
--
0.06
0.075 --
0.09
0.12
I
D
= 5 A, V
GS
= 10 V*
1
on state resistance
--
0.08
0.11
--
0.12
0.18
I
D
= 5 A, V
GS
= 4 V*
1
Forward transfer
admittance
|y
fs
|
6
9.5
--
5
8
--
S
I
D
= 5 A, V
DS
= 10 V*
1
Input capacitance
Ciss
--
860
--
--
1400 --
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
450
--
--
720
--
pF
f = 1 MHz
Reverse transfer
capacitance
Crss
--
140
--
--
220
--
pF
Turn-on delay time
t
d(on)
--
10
--
--
15
--
ns
I
D
= 5 A, V
GS
= 10 V,
Rise time
t
r
--
50
--
--
100
--
ns
R
L
= 6
Turn-off delay time
t
d(off)
--
180
--
--
250
--
ns
Fall time
t
f
--
110
--
--
160
--
ns
Body to drain diode
forward voltage
V
DF
--
1.0
--
--
1.0
--
V
I
F
= 10 A, V
GS
= 0
Body to drain diode
reverse recovery time
t
rr
--
120
--
--
200
--
ns
I
F
= 10 A, V
GS
= 0,
diF/dt = 50 A/s
Note:
1. Pulse Test
Polarity of test conditions for P channel device is reversed.
6AM13
4
6
5
4
3
2
1
0
25
50
75
100
125
150
Ambient Temperature Ta (C)
Channel Dissipation Pch (W)
6 Device Operation
Condition : Channel dissipation of
each die is identical
4 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
60
40
20
0
25
50
75
100
125
150
Case Temperature Tc (C)
Channel Dissipation Pch (W)
Condition : Channel dissipation of
each die is identical
6 Device Operation
4 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
50
30
10
3
1
0.3
0.1
0.05
0.1
0.3
1
3
10
30
100
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
1 ms
PW = 10 ms (1 shot)
DC Operation (Tc = 25C)
Ta = 25C
Operation in this area
is limited by R (on)
DS
10 s
100 s
Maximum Safe Operation Area
(P-Channel)
50
8
20
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
40
10
4
12
16
0
20
30
Drain Current I
D
(A)
Pulse Test
5 V
4 V
V
GS
= 3 V
8 V
6 V
10 V
6AM13
5
20
2
5
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
16
4
1
3
4
0
8
12
V
DS
= 10 V
Pulse Test
T
C
= 25C
75C
25C
2.0
4
10
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
1.6
0.4
2
6
8
0
0.8
1.2
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
I
D
= 2 A
Pulse Test
5 A
10 A
15 A
0.5
5
50
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
D
S (on)
(
)
0.2
0.02
2
10
20
0.01
0.05
0.1
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
1
0.005
100
V
GS
= 4 V
10 V
0.25
40
160
Case Temperature T
C
(C)
Static Drain to Source on State Resistance
R
D
S (on)
(
)
0.20
0.05
0
80
120
0
0.10
0.15
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
40
10 A
2, 5 A
V
GS
= 4 V
V
GS
= 10 V
2, 5, 10 A
15 A