6AM15
Silicon N/P Channel MOS FET
High Speed Power Switching
ADE-208-719 (Z)
1st. Edition
February 1999
Features
Low on-resistance
N Channel : RDS(on) = 0.045
typ.
P Channel : RDS(on) = 0.085
typ.
High speed switching
4 V gate drive device can be driven from 5 V source
High density mounting
Outline
6AM15
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Nch Pch
Drain to source voltage
VDSS
60
60
V
Gate to source voltage
VGSS
20
20
V
Drain current
ID
10
10
A
Drain peak current
ID(pulse)
Note1
40
40
A
Body-drain diode reverse drain current
IDR
10
10
A
Avalanche current
IAP
Note3
10
10
A
Avalanche energy
EAR
Note3
8.5
mJ
Channel dissipation
Pch (Tc = 25C)
Note2
42
W
Channel dissipation
Pch Note2
4.8
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1%
2. 6 Devices operation
3. Value at Ta = 25C, Rg
50
Electrical Characteristics
(N Channel)
(Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DS
S
60
--
--
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GS
S
20
--
--
V
IG = 100
A, VDS = 0
Gate to source leak current
IGSS
--
--
10
A
VGS = 16 V, VDS = 0
Zero gate voltage drain current
IDSS
--
--
10
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off) 1.5
--
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on) --
0.045
0.060
ID = 5 A, VGS = 10 V
Note5
resistance
RDS(on) --
0.070
0.115
ID = 5 A, VGS = 4 V
Note5
Forward transfer admittance
|yfs|
5.5
9
--
S
ID = 5 A, VDS = 10 V
Note5
Input capacitance
Ciss
--
500
--
pF
VDS = 10 V
Output capacitance
Coss
--
260
--
pF
VGS = 0
Reverse transfer capacitance
Crss
--
110
--
pF
f = 1 MHz
Turn-on delay time
td(on)
--
10
--
ns
VGS =10 V, ID = 5 A
6AM15
_
Rise time
tr
--
50
--
ns
RL = 6
Turn-off delay time
td(off)
--
90
--
ns
Fall time
tf
--
100
--
ns
Bodydrain diode forward voltage
VDF
--
0.9
--
V
I
F
=10 A, VGS = 0
Bodydrain diode reverse recovery
time
trr
--
52
--
ns
I
F
=10 A, VGS = 0
diF/ dt = 50A/ s
Note:
5. Pulse test
Electrical Characteristics (P Channel) (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DS
S
60
--
--
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GS
S
20
--
--
V
IG = 100
A, VDS = 0
Gate to source leak current
IGSS
--
--
10
A
VGS = 16 V, VDS = 0
Zero gate voltage drain current
IDSS
--
--
10
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off) 1.0
--
2.0
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on) --
0.085
0.105
ID = 5 A, VGS = 10 V
Note5
resistance
RDS(on) --
0.115
0.165
ID = 5 A, VGS = 4 V
Note5
Forward transfer admittance
|yfs|
5.5
9
--
S
ID = 5 A, VDS = 10 V
Note5
Input capacitance
Ciss
--
850
--
pF
VDS = 10 V
Output capacitance
Coss
--
420
--
pF
VGS = 0
Reverse transfer capacitance
Crss
--
110
--
pF
f = 1 MHz
Turn-on delay time
td(on)
--
12
--
ns
VGS = 10 V, ID = 5 A
Rise time
tr
--
55
--
ns
RL = 6
Turn-off delay time
td(off)
--
130
--
ns
Fall time
tf
--
70
--
ns
Bodydrain diode forward voltage
VDF
--
0.95
--
V
I
F
= 10 A, VGS = 0
Bodydrain diode reverse recovery
time
trr
--
65
--
ns
I
F
= 10 A, VGS = 0
diF/ dt = 50 A/ s
Note:
5. Pulse test
PDF 
ZIP
