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Электронный компонент: HSU119

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HSU119
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-444(Z)
Rev 0
Feb. 1997
Features
Low capacitance. (C = 2.0pF max)
Short reverse recovery time. (t
rr
= 3.0ns max)
Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSU119
H1
URP
Outline
Cathode mark
Mark
1
2
1. Cathode
2. Anode
H1
HSU119
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Average forward current
I
O
100
mA
Peak rectified current
I
FM
300
mA
Non-Repetitive peak
forward surge current
I
FSM
*1
4
A
Junction temperature
Tj
125
C
Storage temperature
Tstg
55 to +125
C
Note:
1. Within 1
s forward surge current.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
--
--
0.8
V
I
F
= 10 mA
V
F2
--
--
1.2
I
F
= 100 mA
Reverse current
I
R
--
--
0.1
A
V
R
= 80V
Capacitance
C
--
--
2.0
pF
V
R
= 0V, f = 1 MHz
Reverse recovery
time
*1
t
rr
--
--
3.0
ns
I
F
= 10 mA, V
R
= 6V R
L
= 50
Note:
1. Reverse recovery time test circuit
3k
0.1F
Ro =50
Rin =50
DC
Supply
Pulse
Generator
Sampling
Oscilloscope
Trigger
HSU119
3
Main Characteristic
0
0.2
0.8
10
10
-3
10
-2
-1
0.6
1.0
0.4
1.0
1.2
Ta=-25C
Ta=25C
Ta=75C
10
-9
10
-7
0
20
40
60
80
100
10
-8
10
-6
10
-10
10
-5
10
-4
10
-11
Ta=50C
Ta=75C
Ta=25C
1.0
10
1.0
10
-1
10
f=1MHz
10
-1
Forward voltage V F
(V)
Forward current I
F
(A)
Reverse voltage V R (V)
Reverse current I
R
(A)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
Capacitance C (pF)
Fig.3 Capacitance Vs. Reverse voltage
Reverse voltage V R (V)
HSU119
4
Package Dimensions
Unit : mm
1.250.15
2.50.15
1.70.15
0.30.15
0.90.15
Cathode Mark
1
2
H1
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
URP
--
--
0.004
1. Cathode
2. Anode
0
`
0.10
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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