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MIXERS - CHIP
5
HMC129
GaAs MMIC DOUBLE-BALANCED
MIXER, 4 - 8 GHz
v02.0802
General Description
Features
Functional Diagram
Electrical Specifi cations,
T
A
= +25 C, LO Drive = +15 dBm
Typical Applications
The HMC129 is ideal for:
Microwave & VSAT Radios
Test Equipment
Military EW, ECM, C
3
I
Space Telecom
The HMC129 chip is a miniature double-bal-
anced mixer which can be used as an upcon-
verter or downconverter in the 4 to 8 GHz band.
The chip can be integrated directly into hybrid
MICs without DC bias or external baluns to pro-
vide an extremely compact mixer. It is ideally
suited for applications where small size, no DC
bias, and consistent IC performance are required.
This mixer can operate over a wide LO drive input
of +9 to +15 dBm. It performs equally well as a
Bi-Phase modulator or demodulator. See the
HMC136 data sheet.
Parameter
Min.
Typ.
Max.
Units
Frequency Range, RF & LO
4.0 - 8.0
GHz
Frequency Range, IF
DC - 3.0
GHz
Conversion Loss
7
9
dB
Noise Figure (SSB)
7
9
dB
LO to RF Isolation
30
40
dB
LO to IF Isolation
35
42
dB
IP3 (Input)
13
17
dBm
IP2 (Input)
40
55
dBm
1 dB Gain Compression (Input)
6
10
dBm
* Unless otherwise noted, all measurements performed as downconverter, IF = 100 MHz
Conversion Loss: 7 dB
LO to RF and IF Isolation: 40 dB
Input IP3: +17 dBm
Small Size, No DC Bias Required
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MIXERS - CHIP
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Isolation @ LO = +15 dBm
Conversion Gain vs. LO Drive
v02.0802
HMC129
GaAs MMIC DOUBLE-BALANCED
MIXER, 4 - 8 GHz
-20
-15
-10
-5
0
2
3
4
5
6
7
8
9
10
+ 25 C
+ 85 C
- 55 C
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
2
3
4
5
6
7
8
9
10
RF/IF
LO/RF
LO/IF
ISOLATION (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
2
3
4
5
6
7
8
9
10
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
FREQUENCY (GHz)
CONVERSION GAIN (dB)
-20
-15
-10
-5
0
2
3
4
5
6
7
8
9
10
LO RETURN LOSS
RF RETURN LOSS
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
IF RETURN LOSS
IF BANDWIDTH
FREQUENCY (GHz)
RESPONSE (dB)
-20
-15
-10
-5
0
2
3
4
5
6
7
8
9
10
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
CONVERSION GAIN (dB)
FREQUENCY (GHz)
Conversion Gain vs. Temperature
LO = +15 dBm
Unconverter Performance
Conversion Gain vs. LO Drive
Return Loss @ LO = +15 dBm
IF Bandwidth @ LO = +15 dBm
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MIXERS - CHIP
5
Input IP2 vs. Temperature
@ LO = +15 dBm
10
15
20
25
30
2
3
4
5
6
7
8
9
10
+ 11 dBM
+ 13 dBm
+ 15 dBm
INPUT IP3 (dBM)
FREQUENCY (GHz)
10
15
20
25
30
2
3
4
5
6
7
8
9
10
+ 25 C
+ 85 C
- 55 C
INPUT IP3 (dBm)
FREQUENCY (GHz)
Input IP2 vs. LO Drive
Input IP3 vs. LO Drive
Input P1dB vs. Temperature
@ LO = +15 dBm
Input IP3 vs. Temperature
@ LO = +15 dBm
20
30
40
50
60
70
80
2
3
4
5
6
7
8
9
10
+ 11 dBm
+ 13 dBm
+ 15 dBm
FREQUENCY (GHz)
INPUT IP2 (dBm)
20
30
40
50
60
70
80
2
3
4
5
6
7
8
9
10
+ 25 C
+ 85 C
- 55 C
INPUT IP2 (dBm)
FREQUENCY (GHz)
8
9
10
11
12
13
14
15
2
3
4
5
6
7
8
9
10
+ 25 C
+ 85 C
- 55 C
INPUT P1dB (dBm)
FREQUENCY (GHz)
v02.0802
HMC129
GaAs MMIC DOUBLE-BALANCED
MIXER, 4 - 8 GHz
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MIXERS - CHIP
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Absolute Maximum Ratings
v02.0802
HMC129
GaAs MMIC DOUBLE-BALANCED
MIXER, 4 - 8 GHz
LO Drive
+27 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Harmonics of LO
MxN Spurious @ IF Port
nLO
mRF
0
1
2
3
4
0
xx
13.66
26.83
9.16
38.33
1
8.16
0
31.33
49.33
43.5
2
78.5
80.16
75.16
79.16
76.66
3
76.0
80.0
81.16
64.5
78.66
4
73.83
77.83
80.0
81.83
82.0
RF Freq. = 6.1 GHz @ -10 dBm
LO Freq. = 6.0 GHz @ +13 dBm
Measured as downconverter
nLO Spur @ RF Port
LO Freq. (GHz)
1
2
3
4
4
-30.7
-33.5
-32.7
-56.7
5
-29.2
-57.3
-64.8
-43.8
6
-24.7
-41.8
-35.0
-43.0
7
-19.7
-42.5
-20.5
-45.7
8
-23.3
-45.7
-22.5
-46.8
9
-17.2
-36.8
-26.7
-68.7
LO = +13 dBm
All values in dBc below input LO level measured at RF port
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MIXERS - CHIP
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v02.0802
HMC129
GaAs MMIC DOUBLE-BALANCED
MIXER, 4 - 8 GHz
Outline Drawing
Pad Number
Function
Description
Interface Schematic
1
IF
This pin is DC coupled. For applications not requiring opera-
tion to DC, this port should be DC blocked externally using a
series capacitor whose value has been chosen to pass the
necessary IF frequency range. For operation to DC this pin
must not source or sink more than 2mA of current or die non-
function and possible die failure will result.
2
RF
This pin is DC coupled and matched to 50 Ohm
from 4 to 8 GHz.
3
LO
This pin is DC coupled and matched to 50 Ohm
from 4 to 8 GHz.
GND
The backside of the die must connect to RF ground.
Pad Descriptions
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. BOND PADS ARE .004" SQUARE
3. TYPICAL BOND PAD SPACING CENTER TO CENTER
IS .006" EXCEPT AS SHOWN
4. DIE THICKNESS = .004" [.100 MM]
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
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MIXERS - CHIP
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v02.0802
HMC129
GaAs MMIC DOUBLE-BALANCED
MIXER, 4 - 8 GHz
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).
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