MICROWAVE CORPORATION
14 - 66
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC221
GaAs MMIC SOT26 SPDT
SWITCH, DC - 3 GHz
v01.0700
General Description
Features
Functional Diagram
Low Insertion Loss: 0.4 dB
Ultra Small Package: SOT26
Input IP3: +45 dBm
Positive Control: 0/+3V @ 10 uA
Electrical Specifi cations,
T
A
= +25 C, Vctl = 0/+3 to +8 Vdc
Typical Applications
The HMC221 is ideal for:
ISM Applications
PCMCIA Wireless Cards
Cellular Applications
The HMC221 is a low-cost SPDT switch in a 6-lead
SOT26 plastic package for use in general switching
applications which require very low insertion loss
and very small size. The device can control signals
from DC to 3.0 GHz and is especially suited for
900 MHz, 1.8 - 2.2 GHz, and 2.4 GHz ISM appli-
cations with less than 1 dB loss. The design pro-
vides exceptional insertion loss performance, ideal
for fi lter and receiver switching. RF1 and RF2 are
refl ective shorts when "Off". The two control volt-
ages require a minimal amount of DC current and
offer compatibility with most CMOS & TTL logic
families. See HMC197 for same performance in an
alternate SOT26 pin-out.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.4
0.45
0.6
0.8
0.7
0.8
0.9
1.1
dB
dB
dB
dB
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
24
24
21
14
28
28
25
18
dB
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
20
17
16
11
23
22
20
15
dB
dB
dB
dB
Input Power for 1 dB Compression
(Vctl = 0/+5V)
0.5 - 1.0 GHz
0.5 - 3.0 GHz
25
23
30
29
dBm
dBm
Input Third Order Intercept
(Vctl = 0/+5V) (Two-tone Input Power = +7 dBm Each Tone)
0.5 - 1.0 GHz
0.5 - 3.0 GHz
40
38
45
43
dBm
dBm
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
3
10
ns
ns
MICROWAVE CORPORATION
14 - 67
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0.5
1
1.5
2
2.5
3
INSERTION LOSS (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
0
0.5
1
1.5
2
2.5
3
ISOLATION (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
RETURN LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC221
Return Loss
Insertion Loss
Isolation
v01.0700
GaAs MMIC SOT26 SPDT
SWITCH, DC - 3 GHz
15
20
25
30
35
3
4
5
6
7
8
9
INPUT POWER FOR 0.1 AND 1 dB
COMPRESSION (dBm)
CONTROL INPUT (Vdc)
1 dB at 1900 MHz
1 dB at 900 MHz
0.1 dB at 1900 MHz
0.1 dB at 900 MHz
38
40
42
44
46
48
2
3
4
5
6
7
8
9
INPUT THIRD ORDER
INTERCEPT(dBm)
CONTROL INPUT (Vdc)
900 MHz
1900 MHz
Input 0.1 and 1.0 dB
Compression vs. Control Voltage
Input Third Order
Intercept Point vs. Control Voltage
MICROWAVE CORPORATION
14 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC221
Compression vs. Control Voltage
Caution: Do not operate in 1dB compression at
power levels above +31 dBm (Vctl = +5 Vdc) and do
not "hot switch" power levels greater than +20 dBm
(Vctl = +5Vdc).
DC blocks are required at ports RFC, RF1 and RF2.
v01.0700
Distortion vs. Control Voltage
GaAs MMIC SOT26 SPDT
SWITCH, DC - 3 GHz
Truth Table
*Control Input Voltage Tolerances are 0.2 Vdc.
Carrier at 900 MHz
Carrier at 1900 MHz
Control
Input
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Vdc)
(dBm)
(dBm)
(dBm)
(dBm)
+3
17
20
17
20
+5
25
30
24
29
+8
31
33
30
32
Control
Input
Third Order Intercept (dBm)
+7 dBm Each Tone
(Vdc)
900 MHz
1900 MHz
+3
41
39
+5
45
43
+8
46
44
Control Input*
Control Current
Signal Path
A
(Vdc)
B
(Vdc)
Ia
(uA)
Ib
(uA)
RF to
RF1
RF to
RF2
0
+3
-10
10
ON
OFF
+3
0
10
-10
OFF
ON
0
+5
-55
55
ON
OFF
+5
0
55
-55
OFF
ON
0
+7
-210
210
ON
OFF
+7
0
210
-210
OFF
ON
0
+8
-280
280
ON
OFF
+8
0
280
-280
OFF
ON
MICROWAVE CORPORATION
14 - 69
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC221
v01.0700
Absolute Maximum Ratings
Outline Drawing
GaAs MMIC SOT26 SPDT
SWITCH, DC - 3 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Control Voltage Range (A & B)
-0.2 to +12 Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
14 - 70
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC221
v01.0700
Typical Application Circuit
GaAs MMIC SOT26 SPDT
Switch , DC - 3 GHz
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 5 to 8 Volts applied to the CMOS
logic
gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of
operation.
4. Highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V.
PDF 
ZIP