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5 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC258
v01.0801
General Description
Features
Functional Diagram
Integrated LO Amplifi er: 0dBm Drive
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: 40 dB
Small Size: 0.8mm x 1.1mm
Electrical Specifi cations,
T
A
= +25 C, LO Drive = 0 dBm
Typical Applications
The HMC258 is ideal for:
Microwave Pt to Pt Radios
VSAT
SATCOM
The HMC258 chip is a compact sub-harmonically
pumped (x2) single ended MMIC mixer with an
integrated LO amplifi er which can be used as an
upconverter or downconverter. The chip utilizes a
GaAs MESFET technology that results in a small
overall chip area of 0.9mm
2
. The 2LO to RF isola-
tion is excellent eliminating the need for additional
fi ltering. The LO amplifi er is a single bias (+5V)
two stage design with only 0dBm drive require-
ment. A less stringent oscillator design is made
possible by the low LO drive and sub-harmonic
nature of the chip. All data is with the chip in a 50
ohm test fi xture connected via 0.025mm (1 mil)
diameter wire bonds of minimal length <0.31 mm
(<12 mils).
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Parameter
IF = 1 GHz
Vdd = +5.0V
IF = 1 GHz
Vdd = +5.0V
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range, RF
14 - 21
17 - 20
GHz
Frequency Range, LO
7 - 10.5
8.5 - 10
GHz
Frequency Range, IF
DC - 3
DC - 3
GHz
Conversion Loss
10
13.5
9.5
12
dB
Noise Figure (SSB)
10
13.5
9.5
12
dB
2LO to RF Isolation
30
40
34
40
dB
2LO to IF Isolation
30
40 ~ 50
38
40 ~ 50
dB
IP3 (Input)
0
7
0
7
dBm
1 dB Compression (Input)
-5
0
-4
1
dBm
Supply Current (Idd)
50
50
mA
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MIXERS - CHIP
5
-25
-20
-15
-10
-5
0
13
14
15
16
17
18
19
20
21
22
23
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
+85 C
-55 C
+25 C
-60
-50
-40
-30
-20
-10
0
13
14
15
16
17
18
19
20
21
22
23
ISOLATION (dB)
RF FREQUENCY (GHz)
RF/IF
LO/IF
LO/RF
2LO/RF
2LO/IF
Conversion Gain vs.
Temperature @ LO = 0 dBm
-25
-20
-15
-10
-5
0
13
14
15
16
17
18
19
20
21
22
23
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-2 dBm
-4 dBm
+2 dBm
+4 dBm
0 dBm
v01.0801
Upconverter Performance
Conversion Gain vs. LO Drive
Return Loss @ LO = 0 dBm
-40
-35
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
RETURN LOSS (dB)
FREQUENCY (GHz)
LO
RF
IF
HMC258
Isolation @ LO = 0 dBm
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Conversion Gain vs. LO Drive
IF Bandwidth @ LO = 0 dBm
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
IF CONVERSION GAIN (dB)
IF FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
13
14
15
16
17
18
19
20
21
22
23
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-4 dBm
0 dBm
-2 dBm
+2 dBm
+4 dBm
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MIXERS - CHIP
5
Input IP3 vs. Temperature @ LO = 0 dBm
-10
-5
0
5
10
15
20
13
14
15
16
17
18
19
20
21
22
23
THIRD ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
0 dBm
+2 dBm
-2 dBm
v01.0801
HMC258
Input IP2 vs. Temperature @ LO = 0 dBm
Input IP3 vs. LO Drive
MxN Spurious Outputs
@ LO Drive = 0 dBm
P1dB vs. Temperature @ LO = 0 dBm
-10
-5
0
5
10
15
20
13
14
15
16
17
18
19
20
21
22
23
THIRD ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
+25 C
-55 C
+85 C
20
25
30
35
40
45
50
55
60
13
14
15
16
17
18
19
20
21
22
23
SECOND ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
+25 C
-55 C
+85 C
Input IP2 vs. LO Drive
20
25
30
35
40
45
50
55
60
13
14
15
16
17
18
19
20
21
22
23
SECOND ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
0 dBm
+2 dBm
-2 dBm
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
-4
-2
0
2
4
6
13
14
15
16
17
18
19
20
21
22
23
P1dB (dBm)
RF FREQUENCY (GHz)
-55 C
+25C
+85 C
nLO
mRF
5
4
3
2
1
0
-3
-2
-44
-1
-57
-18
-52
0
-9
-26
+20
1
X
-46
-2
2
-52
-30
-49
3
-56
RF = 18 GHz @ -10 dBm
LO = 8.5 GHz @ 0 dBm
All values in dBc below the IF power level
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MIXERS - CHIP
5
Outline Drawing
Absolute Maximum Ratings
v01.0801
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
NOTE: A 100pF single layer chip bypass capacitor
is recommended on the Vdd port no further than
0.762mm (30 mils) from the HMC258
RF / IF Input (Vdd = +5V)
+13 dBm
LO Drive (Vdd = +5V)
+13 dBm
Vdd
+10 Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BOND PADS ARE .004" SQUARE.
3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006".
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
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MIXERS - CHIP
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MIC Assembly Techniques
Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates
are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick
alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that
the surface of the die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat
spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize
bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor
(mounted eutuctically or by conductive epoxy) placed no further than 0.762mm (30 Mils)
from the chip is recommended. The photo in fi gure 3 shows a typical assembly for the
HMC258 MMIC chip.
v01.0801
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Figure 3: Typical HMC258 Assembly
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order Online at www.hittite.com
MIXERS - CHIP
5
v01.0801
HMC258
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).
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