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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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AMPLIFIERS - CHIP

HMC263

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 36 GHz

v02.0701

General Description

Features

Functional Diagram

The HMC263 chip is a GaAs MMIC Low Noise
Amplifi er (LNA) which covers the frequency range
of 24 to 36 GHz. The chip can easily be inte-
grated into Multi-Chip Modules (MCMs) due to its
small (3.29 mm2) size. The chip utilizes a GaAs
PHEMT process offering 22 dB gain from a single
bias supply of + 3V @ 58 mA with a noise fi gure
of 2.0 dB. All data is with the chip in a 50 ohm test
fi xture connected via 0.076 mm (3 mil) diameter
ribbon bonds of minimal length 0.31 mm (<12
mils). The HMC263 may be used in conjunction
with HMC259, HMC264, or HMC265 mixers to
realize a millimeterwave system receiver.

Excellent Noise Figure: 2.0 dB

Gain: 22 dB

Single Supply : +3V @ 58 mA

Small Size: 1.33 mm x 2.48 mm

Electrical Specifi cations,

= +25° C, Vdd = +3V

Typical Applications

The HMC263 is ideal for:

· Millimeterwave Point-to-Point Radios

· LMDS

· VSAT

· SATCOM

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

Frequency Range

24 - 27

27 - 32

32 - 36

GHz

Gain

Gain Variation Over Temperature

0.03

0.04

0.03

0.04

0.03

0.04

dB/°C

Noise Figure

2.5

3.3

2.0

2.5

2.1

2.6

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

-1

dBm

Saturated Output Power (Psat)

dBm

Output Third Order Intercept (IP3)

dBm

Supply Current (Idd) (@ Vdd = +3.0V)

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AMPLIFIERS - CHIP

+25C
-55C
+85C

GAIN (dB)

FREQUENCY (GHz)

+25C
-55C
+85C

GAIN (dB)

FREQUENCY (GHz)

-30

-25

-20

-15

-10

-5

S11

S22

RETURN LOSS (dB)

FREQUENCY (GHz)

-30

-25

-20

-15

-10

-5

S11

S22

RETURN LOSS (dB)

FREQUENCY (GHz)

+25C
-55C
+85C

NOISE FIGURE (dB)

FREQUENCY (GHz)

+25C
-55C
+85C

NOISE FIGURE (dB)

FREQUENCY (GHz)

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

HMC263

Noise Figure
vs. Temperature @ Vdd = +3V

Return Loss @ Vdd = +3V

Return Loss @ Vdd = +5V

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 36 GHz

v02.0701

Gain vs. Temperature @ Vdd = +3V

Gain vs. Temperature @ Vdd = +5V

Noise Figure
vs. Temperature @ Vdd = +5V

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AMPLIFIERS - CHIP

HMC263

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 36 GHz

v02.0701

19.5

20.5

21.5

1.75

2.25

2.5

2.75

3.25

2.5

3.5

4.5

5.5

GAIN (dB)

NF (dB)

Vdd SUPPLY VOLTAGE (Vdc)

-70

-60

-50

-40

-30

-20

-10

ISOLATION (dB)

FREQUENCY (GHz)

-4

-2

+25C
-55C
+85C

P1dB (dBm)

FREQUENCY (GHz)

-6

-4

-2

+25C
-55C
+85C

P1dB (dBm)

FREQUENCY (GHz)

+25C
-55C
+85C

IP3 (dBm)

FREQUENCY (GHz)

+25C
-55C
+85C

IP3 (dBm)

FREQUENCY (GHz)

Output IP3 @ Vdd = +3V

Output IP3 @ Vdd = +5V

Isolation

Gain & Noise Figure
vs. Supply Voltage @ 30 GHz

Output P1dB @ Vdd = +3V

Output P1dB @ Vdd = +5V

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AMPLIFIERS - CHIP

Outline Drawing

Absolute Maximum Ratings

NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD

HMC263

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 36 GHz

v02.0701

Drain Bias Voltage (Vdd1, Vdd2)

+5.5 Vdc

RF Input Power (RFin)(Vdd = +3.0 Vdc)

-5 dBm

Channel Temperature

175 °C

Continuous Pdiss (T = 85 °C)
(derate 7.69 mW/°C above 85 °C)

0.692 W

Thermal Resistance
(channel to die bottom)

130 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

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AMPLIFIERS - CHIP

Pad Number

Function

Description

Interface Schematic

RF Input

This pad is AC coupled and matched to 50 Ohm from 24 - 36 GHz

2, 3

Vd1, Vd2

Power supply for the 4-stage amplifi er. An external RF bypass capaci-

tor of 100 - 300 pF is required. The bond length to the capacitor should

be as short as possible. The ground side of the capacitor should be

connected to the housing ground.

RF Output

This pad is AC coupled and matched to 50 Ohm from 24 - 36 GHz

Pad Description

HMC263

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 36 GHz

v02.0701

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AMPLIFIERS - CHIP

HMC263

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 36 GHz

v02.0701

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).

Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.

Assembly Diagrams

Ribbon Bond

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AMPLIFIERS - CHIP

HMC263

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 36 GHz

v02.0701

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.

Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.

Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal
and bias cables to minimize inductive pick-up.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fi ngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically con-
ductive epoxy. The mounting surface should be clean and fl at.

Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool
temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should
be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20
seconds. No more than 3 seconds of scrubbing should be required for attachment.

Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around
the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.

Wire Bonding

Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports)
0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18
to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).

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