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5 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC266
v01.0300
General Description
Features
Functional Diagram
Input IP3: Up to +17 dBm
Sub-Harmonically Pumped (x2) LO
Small Size: 1.32mm x 1.47mm
Electrical Specifi cations,
T
A
= +25 C, LO Drive = +12 dBm
Typical Applications
The HMC266 is ideal for:
23, 26, & 38 GHz Point to Point Radios
LMDS
SATCOM
The HMC266 chip is a broadband GaAs MMIC
sub-harmonically pumped (x2) balanced passive
mixer which can be used as an upconverter or
downconverter in a small overall chip area of 1.9
mm
2
. The 2LO to RF isolation is excellent elimi-
nating the need for additional fi ltering. All data is
with the chip in a 50 ohm test fi xture connected
via 0.076 mm (3 mil) ribbon bonds of minimal
length <0.31 mm (<12 mils). These devices are
much smaller and more reliable than hybrid diode
mixer designs.
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Parameter
IF = 1 GHz
Units
Min.
Typ.
Max.
Frequency Range, RF
20 - 40
GHz
Frequency Range, LO
10 - 20
GHz
Frequency Range, IF
1 - 3
GHz
Conversion Loss
12
16
dB
Noise Figure (SSB)
12
16
dB
2LO to RF Isolation
42
52
dB
LO to RF Isolation
20
24
dB
2LO to IF Isolation
50
60
dB
RF to IF Isolation
16
22
dB
LO to IF Isolation
48
55
dB
IP3 (Input)
10
13
dBm
1 dB Compression (Input)
0
+4
dBm
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MIXERS - CHIP
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v01.0300
-20
-15
-10
-5
0
15
20
25
30
35
40
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
+85 C
-55 C
+25 C
-80
-70
-60
-50
-40
-30
-20
-10
0
15
20
25
30
35
40
ISOLATION (dB)
RF FREQUENCY (GHz)
RF/IF
LO/RF
LO/IF
2LO/RF
2LO/IF
Conversion Gain vs.
Temperature @ LO = +12 dBm
HMC266
-20
-15
-10
-5
0
15
20
25
30
35
40
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
+16dBm
+10dBm
+14dBm
+12dBm
+8dBm
-20
-15
-10
-5
0
0
1
2
3
4
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
IF Return Loss
Conversion Gain
-20
-15
-10
-5
0
0
5
10
15
20
25
30
35
40
RETURN LOSS (dB)
FREQUENCY (GHz)
LO
RF
-20
-15
-10
-5
0
15
20
25
30
35
40
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
Isolation @ LO = +12 dBm
Conversion Gain vs. LO Drive
Return Loss @ LO = +12 dBm
IF Bandwidth @ LO = +12 dBm
Upconverter Performance
Conversion Gain @ LO = +12 dBm
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
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v01.0300
HMC266
MxN Spurious Outputs
as a Down Converter
0
5
10
15
20
20
25
30
35
40
INPUT IP3 (dBm)
RF FREQUENCY (GHz)
+14dBm
+16dBm
+12dBm
0
5
10
15
20
20
25
30
35
40
INPUT IP3 (dBm)
RF FREQUENCY (GHz)
+25C
+85C
-55C
Input IP3 vs. LO Drive
Input IP3 vs.
Temperature @ LO = +12 dBm
Input IP2 vs. LO Drive
80
85
90
95
100
20
25
30
35
40
INPUT IP2 (dBm)
RF FREQUENCY (GHz)
+14dBm
+16dBm
+12dBm
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Input IP2 vs.
Temperature @ LO = +12 dBm
P1dB vs.
Temperature @ LO = +12 dBm
80
85
90
95
100
20
25
30
35
40
INPUT IP2 (dBm)
RF FREQUENCY (GHz)
-55C
+85C
+25C
0
1
2
3
4
5
6
7
8
9
10
20
25
30
35
40
INPUT P1dB (dBm)
RF FREQUENCY (GHz)
+85C
+25C
-55C
nLO
mRF
5
4
3
2
1
0
-3
-2
67
-1
50
29
70
0
1
23
19
1
x
63
6
2
63
79
66
3
69
RF = 27 GHz @ -10 dBm
LO = 13 GHz @ +12 dBm drive level
All values in dBc below IF power level
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MIXERS - CHIP
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v01.0300
HMC266
Outline Drawing
(See Handling Mounting Bonding)
Absolute Maximum Ratings
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
RF / IF Input
+13 dBm
LO Drive
+23 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004" SQUARE.
3. BOND PAD SPACING CENTER TO CENTER IS .006".
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
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MIXERS - CHIP
5
MMIC Assembly Techniques
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recom-
mended to minimize inductance on the RF ports.
HMC266
v01.0300
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Ribbon Bond
Ribbon Bond
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MIXERS - CHIP
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GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC266
v01.0300
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ribbon bond with 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size recommended. Thermosonic wirebonding with a nominal stage tem-
perature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the
minimum level of ulrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible
<0.31mm (12 mils).
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