www.docs.chipfind.ru
MICROWAVE CORPORATION
5 - 70
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC292
v02.1202
General Description
Features
Functional Diagram
Input IP3: +19 dBm
LO / RF Isolation: 36 dB
Passive: No DC Bias Required
Small Size: 0.58 mm x 1.04 mm
Electrical Specifi cations,
T
A
= +25 C
Typical Applications
The HMC292 is ideal for:
Microwave Point to Point Radios
LMDS
SATCOM
The HMC292 chip is a miniature passive GaAs
MMIC double-balanced mixer which can be used
as an upconverter or downconverter from 18 - 32
GHz in a small chip area of 0.66 mm
2
. Excellent
isolations are provided by on-chip baluns, which
require no external components and no DC bias.
All data is measured with the chip in a 50 ohm
test fi xture connected via 0.076 mm (3 mil) ribbon
bonds of minimal length <0.31 mm (<12 mils).
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
Parameter
LO = +13 dBm
LO = +13 dBm
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range, RF & LO
20 - 30
18 - 32
GHz
Frequency Range, IF
DC - 8
DC - 8
GHz
Conversion Loss
7.5
9
8
10
dB
Noise Figure (SSB)
7.5
9
8
10
dB
LO to RF Isolation
31
38
30
36
dB
LO to IF Isolation
33
40
30
40
dB
RF to IF Isolation
20
25
17
25
dB
IP3 (Input)
17
19
15
19
dB
IP2 (Input)
45
50
42
50
dBm
1 dB Gain Compression (Input)
8
12
8
12
dBm
MICROWAVE CORPORATION
5 - 71
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
-20
-15
-10
-5
0
15
20
25
30
35
CONVERSION GAIN (dB)
FREQUENCY (GHz)
+85 C
-55 C
+25 C
-60
-50
-40
-30
-20
-10
0
15
20
25
30
35
ISOLATION (dB)
FREQUENCY (GHz)
RF/IF
LO/RF
LO/IF
Conversion Gain vs.
Temperature @ LO = +13 dBm
HMC292
-20
-15
-10
-5
0
15
20
25
30
35
CONVERSION GAIN (dB)
FREQUENCY (GHz)
+10 dBm
+8 dBm
+15 dBm
+13 dBm
-20
-15
-10
-5
0
0
2
4
6
8
10
IF CONVERSION GAIN & RETURN LOSS (dB
)
IF FREQUENCY (GHz)
Return Loss
Conversion Gain
-20
-15
-10
-5
0
10
20
30
40
RETURN LOSS (dB)
FREQUENCY (GHz)
LO
RF
-20
-15
-10
-5
0
15
20
25
30
35
CONVERSION GAIN (dB)
FREQUENCY (GHz)
Isolation @ LO = +13 dBm
Conversion Gain vs. LO Drive
RF & LO
Return Loss @ LO = +13 dBm
IF Bandwidth @ LO = +13 dBm
Upconverter Performance
Conversion Gain @ LO = +13 dBm
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
v02.1202
MICROWAVE CORPORATION
5 - 72
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC292
-5
0
5
10
15
20
25
15
20
25
30
35
INPUT IP3 (dBm)
FREQUENCY (GHz)
+13 dBm
+10 dBm
+8 dBm
-5
0
5
10
15
20
25
15
20
25
30
35
INPUT IP3 (dBm)
FREQUENCY (GHz)
-55C
+85C
+25C
Input IP3 vs. LO Drive
Input IP3 vs.
Temperature @ LO = +13 dBm
Input IP2 vs. LO Drive
0
10
20
30
40
50
60
70
80
15
20
25
30
35
INPUT IP2 (dBm)
FREQUENCY (GHz)
+13 dBm
+10 dBm
+8 dBm
Input IP2 vs.
Temperature @ LO = +13 dBm
MxN Spurious Outputs
0
10
20
30
40
50
60
70
80
15
20
25
30
35
INPUT IP2 (dBm)
FREQUENCY (GHz)
-55C
+85C
+25C
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
Input P1dB vs.
Temperature @ LO = +13 dBm
5
7
9
11
13
15
15
20
25
30
35
INPUT P1dB
FREQUENCY (GHz)
-55 C
+25 C
+85 C
nLO
mRF
0
1
2
3
4
0
xx
11
1
17
0
39
2
70
77
76
3
93
69
86
4
>110
>110
>110
RF = 21 GHz @ -10 dBm
LO = 22 GHz @ +13 dBm
All values in dBc below the IF power level.
v02.1202
MICROWAVE CORPORATION
5 - 73
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC292
Outline Drawing
Absolute Maximum Ratings
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
v02.1202
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004".
3. TYPICAL BOND PAD IS .004" SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
MICROWAVE CORPORATION
5 - 74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC292
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
v02.1202
MMIC Assembly Techniques
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recom-
mended to minimize inductance on the RF ports.
Ribbon Bond
Ribbon Bond
PDF 
ZIP