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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC294
v01.0300
General Description
Features
Functional Diagram
Input IP3: +20 dBm
LO / RF Isolation: 27 dB
Passive: No DC Bias Required
Small Size: 0.88 mm x 1.93 mm
Electrical Specifi cations,
T
A
= +25 C, LO Drive = +14 dBm
Typical Applications
The HMC294 is ideal for:
Microwave Pt to Pt Radios
LMDS
SATCOM
The HMC294 chip is a miniature passive GaAs
MMIC double-balanced mixer which can be used
as an upconverter or downconverter from 25 - 40
GHz in a small chip area of 1.70 mm
2
. Excellent
isolations are provided by on-chip baluns, which
require no external components and no DC bias.
All data is measured with the chip in a 50 ohm
test fi xture connected via 0.076 mm (3 mil) gold
ribbon of minimal length <0.31 mm (<12 mils).
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Parameter
Min.
Typ.
Max. Units
Frequency Range, RF & LO
25 - 40
GHz
Frequency Range, IF
DC - 2
GHz
Conversion Loss
10
13
dB
Noise Figure (SSB)
10
13
dB
LO to RF Isolation
22
27
dB
LO to IF Isolation
31
38
dB
RF to IF Isolation
27
33
dB
IP3 (Input)
15
20
dBm
IP2 (Input)
24
35
dBm
1 dB Gain Compression (Input)
9
12
dBm
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MIXERS - CHIP
5
v01.0300
-20
-15
-10
-5
0
20
25
30
35
40
CONVERSION GAIN (dB)
FREQUENCY (GHz)
+85 C
-55 C
+25 C
-50
-40
-30
-20
-10
0
20
25
30
35
40
ISOLATION (dB)
FREQUENCY (GHz)
RF/IF
LO/RF
LO/IF
Conversion Gain vs.
Temperature @ LO = +14 dBm
HMC294
-20
-15
-10
-5
0
20
25
30
35
40
CONVERSION GAIN (dB)
FREQUENCY (GHz)
+14 dBm
+8 dBm
+16 dBm
+12 dBm
+10 dBm
-20
-15
-10
-5
0
0
2
4
6
8
IF CONVERSION GAIN (dB) AND
RETURN LOSS (dB)
IF FREQUENCY (GHz)
IF Return Loss
IF Conversion Gain
-15
-10
-5
0
20
25
30
35
40
RETURN LOSS (dB)
FREQUENCY (GHz)
LO
RF
-20
-15
-10
-5
0
20
25
30
35
40
CONVERSION GAIN (dB)
FREQUENCY (GHz)
Isolation @ LO = +14 dBm
Conversion Gain vs. LO Drive
Return Loss @ LO = +14 dBm
IF Bandwidth @ LO = +14 dBm
Upconverter Performance
Conversion Gain @ LO = +14 dBm
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
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MIXERS - CHIP
5
v01.0300
HMC294
5
10
15
20
25
30
20
25
30
35
40
INPUT IP3 (dBm)
FREQUENCY (GHz)
+12 dBm
+10 dBm
+8 dBm
+14 dBm
5
10
15
20
25
30
20
25
30
35
40
INPUT IP3 (dBm)
FREQUENCY (GHz)
-55C
+85C
+25C
Input IP3 vs. LO Drive
Input IP3 vs.
Temperature @ LO = +14 dBm
Input IP2 vs. LO Drive
0
10
20
30
40
50
20
25
30
35
40
INPUT IP2 (dBm)
FREQUENCY (GHz)
+12 dBm
+10 dBm
+8 dBm
+14 dBm
Input IP2 vs.
Temperature @ LO = +14 dBm
MxN Spurious Outputs
0
10
20
30
40
50
20
25
30
35
40
INPUT IP2 (dBm)
FREQUENCY (GHz)
-55C
+85C
+25C
Input P1dB vs.
Temperature @ LO = +14 dBm
6
8
10
12
14
16
20
25
30
35
40
INPUT P1dB
FREQUENCY (GHz)
-55 C
+25 C
+85 C
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
nLO
mRF
0
1
2
3
4
0
xx
3.9
1
25
0
47
2
91
59
86
3
>110
68
105
4
>110
106
RF = 35 GHz @ -10 dBm
LO = 34 GHz @ +14 dBm
All values in dBc below the IF power level.
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MIXERS - CHIP
5
v01.0300
HMC294
Outline Drawing
Absolute Maximum Ratings
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +125 C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004".
3. TYPICAL BOND PAD IS .004" SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
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MIXERS - CHIP
5
HMC294
v01.0300
MIC Assembly Techniques
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) and minimal length <0.31 mm (<12 mils) is recom-
mended to minimize inductance on the RF ports.
Ribbon Bond
Ribbon Bond
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
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MIXERS - CHIP
5
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC294
v01.0300
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ribbon bond with 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage tem-
perature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the
minimum level of ulrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible
<0.31mm (12 mils).
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