www.docs.chipfind.ru
MICROWAVE CORPORATION
14 - 176
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC322LP4
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
v03.0604
General Description
Features
Functional Diagram
The HMC322LP4 is a broadband non-refl ective
GaAs MESFET SP8T switch in a low cost lead-
less surface mount package. Covering DC to 8
GHz, this switch offers high isolation and low
insertion loss. This switch also includes an on
board binary decoder circuit which reduces the
required logic control lines to three. The switch
operates using a negative control voltage of 0/-5
volts, and requires a fi xed bias of -5v. This switch
is suitable for usage in 50-Ohm or 75-Ohm sys-
tems.
Broadband Performance: DC - 8.0 GHz
High Isolation: >30 dB@ 6 GHz
Low Insertion Loss: 2.4 dB@ 6 GHz
Integrated 3:8 TTL Decoder
4 mm x 4 mm x 1 mm SMT Package
Electrical Specifi cations,
T
A
= +25 C, With 0/-5V Control, 50 Ohm System
Typical Applications
This switch is suitable for usage in DC - 8.0 GHz
50-Ohm or 75-Ohm systems:
Broadband
Fiber Optics
Switched Filter Banks
Wireless below 8 GHz
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 8.0 GHz
2.1
2.3
2.5
2.5
2.7
2.9
dB
dB
dB
Isolation
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
35
30
25
20
40
35
30
25
dB
dB
dB
dB
Return Loss
"On State"
DC - 2.0 GHz
DC - 8.0 GHz
9
6
12
10
dB
dB
Return Loss
"Off State"
DC - 8.0 GHz
7
10
dB
Input Power for 1 dB Compression
0.5 - 8.0 GHz
19
23
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.5 - 8.0 GHz
36
40
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
50
150
ns
ns
MICROWAVE CORPORATION
14 - 177
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-5
-4
-3
-2
-1
0
0
1
2
3
4
5
6
7
8
9
+25 C
-40 C
+85 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
9
RF1
RF2
RF3
RF4
RF5
RF6
RF7
RF8
ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
9
RFC
RF1-8 ON
RF1-8 OFF
RETURN LOSS (dB)
FREQUENCY (GHz)
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0.1dB Compression Point
1dB Compression Point
INPUT COMPRESSION POINT (dBm)
FREQUENCY (GHz)
30
35
40
45
50
1
2
3
4
5
6
7
8
INPUT THIRD ORDER INTERCEPT (dBm)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC322LP4
Input Third Order Intercept Point
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Return Loss
0.1 and 1 dB Input Compression Point
Insertion Loss vs. Temperature
Isolation
v03.0604
MICROWAVE CORPORATION
14 - 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC322LP4
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Truth Table
Bias Voltage & Current
Control Voltages
TTL Interface Circuit
Note:
Control inputs A, B, and C can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and
to Vee (pin 8) of the RF Switch.
Control Input
Signal Path State
A
B
C
RFCOM to:
High
High
High
RF1
Low
High
High
RF2
High
Low
High
RF3
Low
Low
High
RF4
High
High
Low
RF5
Low
High
Low
RF6
High
Low
Low
RF7
Low
Low
Low
RF8
Vee Range = -5.0 Vdc 10%
Vee
(Vdc)
Iee (Typ.)
(mA)
Iee (Max.)
(mA)
-5.0
5.0
9.0
State
Bias Condition
Low
-3V to 0 Vdc @ 25 uA Typical
High
-5 to -4.2 Vdc @ 5 uA Typical
v03.0604
MICROWAVE CORPORATION
14 - 179
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
Absolute Maximum Ratings
HMC322LP4
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Outline Drawing
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND
PATTERN.
Bias Voltage Range (Vee)
-7.0 Vdc
Control Voltage Range
(A, B, & C)
Vee -0.5V to +1.0 Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Maximum Input Power
26 dBm
v03.0604
MICROWAVE CORPORATION
14 - 180
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
Pin Number
Function
Description
Interface Schematic
1, 3, 5, 7, 12,
14, 16, 18,
21, 23
GND
Package bottom has exposed metal paddle that must also be
connected to PCB RF ground.
2, 4, 6, 13, 15,
17, 19, 22, 24
RF1 - RF8
& RFC
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
8
VEE
Supply Voltage =5V 10%
9
CTLC
See truth table and control voltage table.
10
CTLB
See truth table and control voltage table.
11
CTLA
See truth table and control voltage table.
20
N/C
This pin should be connected to PCB RF ground to maximize
isolation.
HMC322LP4
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Pin Descriptions
v03.0604
PDF 
ZIP