MICROWAVE CORPORATION
8 - 98
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC326MS8G
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
v04.1203
General Description
Features
Functional Diagram
The HMC326MS8G is a high effi ciency GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC driver
amplifi er which operates between 3.0 and 4.5 GHz.
The amplifi er is packaged in a low cost, surface mount
8 leaded package with an exposed base for improved
RF and thermal performance. The amplifi er provides
21 dB of gain and +26 dBm of saturated power from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when the
amplifi er is not in use. Internal circuit matching was
optimized to provide greater than 40% PAE.
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5.0V
Ultra Small Package: MSOP8G
Electrical Specifi cations,
T
A
= +25 C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC326MS8G is ideal for:
Microwave Radios
Broadband Radio Systems
Wireless Local Loop Driver Amplifi er
Parameter
Min.
Typ.
Max.
Units
Frequency Range
3.0 - 4.5
GHz
Gain
18
21
dB
Gain Variation Over Temperature
0.025
0.035
dB / C
Input Return Loss
12
dB
Output Return Loss
7
dB
Output Power for 1dB Compression (P1dB)
21
23.5
dBm
Saturated Output Power (Psat)
26
dBm
Output Third Order Intercept (IP3)
32
36
dBm
Noise Figure
5
dB
Supply Current (Icc)
Vpd = 0V / 5V
0.001 / 130
mA
Control Current (Ipd)
7
mA
Switching Speed
tOn/tOff
10
ns
MICROWAVE CORPORATION
8 - 99
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC326MS8G
P1dB vs. Temperature
Psat vs. Temperature
v04.1203
Broadband Gain & Return Loss
Gain vs. Temperature
Output IP3 vs. Temperature
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
-20
-15
-10
-5
0
5
10
15
20
25
2
2.5
3
3.5
4
4.5
5
5.5
6
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
16
18
20
22
24
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
20
22
24
26
28
30
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
30
32
34
36
38
40
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
45
-8
-6
-4
-2
0
2
4
6
8
10
12
Output Power (dBm)
Gain (dB)
PAE (%)
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 3.5 GHz
MICROWAVE CORPORATION
8 - 100
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC326MS8G
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
v04.1203
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Gain, Power & Quiescent Supply
Current vs. Vpd @3.5 GHz
-20
-15
-10
-5
0
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-15
-12
-9
-6
-3
0
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
10
30
50
70
90
110
130
150
1.5
2
2.5
3
3.5
4
4.5
5
P1dB
Psat
Gain
Icc
GAIN (dB), P1dB (d
Bm), Psat (dBm)
I
cc (mA)
Vpd (Vdc)
MICROWAVE CORPORATION
8 - 101
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC326MS8G
v04.1203
Outline Drawing
Absolute Maximum Ratings
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage Range (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+20 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 11.49 mW/C above 85 C)
0.747 W
Thermal Resistance
(junction to ground paddle)
87 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
8 - 102
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC326MS8G
v04.1203
Evaluation PCB
The circuit board used in the fi nal application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads and exposed
paddle should be connected directly to the ground plane
similar to that shown. A suffi cient number of VIA holes
should be used to connect the top and bottom ground
planes. The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board shown is
available from Hittite upon request.
List of Material
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Item
Description
J1 - J2
PC Mount SMA RF Connector
J3
2mm DC Header
C1 - C2
330 pF Capacitor, 0603 Pkg.
C3
0.7 pF Capacitor, 0603 Pkg.
C4
3.0 pF Capacitor, 0402 Pkg.
C5
2.2 F Capacitor, Tantalum
L1
3.3 nH Inductor, 0805 Pkg.
U1
HMC326MS8G Amplifi er
PCB*
104106 Eval Board
*Circuit Board Material: Rogers 4350
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