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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC329
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
v01.0301
General Description
Features
Functional Diagram
Passive: No DC Bias Required
Input IP3: +19 dBm
LO/RF Isolation: 42 dB
Small Size: 0.47 mm
2
Electrical Specifi cations,
T
A
= +25 C
Typical Applications
The HMC329 is ideal for:
LMDS
Microwave Point-to-Point Radios
SATCOM
* Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
The HMC329 chip is a miniature passive double
balanced mixer which can be used as an upcon-
verter or downconverter from 25-40 GHz in a
small chip area of 0.84mm x 0.55mm. Excellent
isolations are provided by on-chip baluns, and
the chip requires no external components and no
DC bias. Measurements were made with the chip
mounted and ribbon bonded into in a 50-ohm
microstrip test fi xture that contains 5-mil alumina
substrates between the chip and K-connectors.
Measured data includes the parasitic effects of
the assembly. RF connections to the chip were
made with 0.076 mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
Parameter
LO = +13 dBm, IF = 1 GHz
Units
Min.
Typ.
Max.
Frequency Range, RF & LO
25 - 40
GHz
Frequency Range, IF
DC - 8
GHz
Conversion Loss
9.5
11.5
dB
Noise Figure (SSB)
9.5
11.5
dB
LO to RF Isolation
38
42
dB
LO to IF Isolation
25
35
dB
RF to IF Isolation
21
28
dB
IP3 (Input)
16
19
dBm
IP2 (Input)
45
55
dBm
1 dB Compression (Input)
8
11
dBm
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MIXERS - CHIP
5
-20
-16
-12
-8
-4
0
22
24
26
28
30
32
34
36
38
40
42
+ 25 C
+ 85 C
- 55 C
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
22
24
26
28
30
32
34
36
38
40
42
LO / RF
RF / IF
LO / IF
ISOLATION (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
22
24
26
28
30
32
34
36
38
40
42
+ 7 dBm
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
22
24
26
28
30
32
34
36
38
40
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
0
1
2
3
4
5
6
7
8
9
10
11
12
IF Return Loss
Conversion Gain
RESPONSE (dB)
FREQUENCY (GHz)
HMC329
Conversion Gain vs.
Temperature @ LO = +13 dBm
Conversion Gain vs. LO Drive
Upconverter Performance
Conversion Gain @ LO = +13 dBm
Isolation @ LO = +13 dBm
IF Bandwidth @ LO = +13 dBm
v01.0301
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
MICROWAVE CORPORATION
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MIXERS - CHIP
5
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
v01.0301
HMC329
MxN Spurious Outputs
as a Down Converter
40
45
50
55
60
65
70
26
28
30
32
34
36
38
40
+ 25 C
+ 85 C
- 55 C
IP2 (dBm)
FREQUENCY (GHz)
Input IP2 vs.
Temperature @ LO = +13 dBm *
0
5
10
15
20
25
26
28
30
32
34
36
38
40
+ 11 dBm
+ 13 dBm
+ 15 dBm
IP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
26
28
30
32
34
36
38
40
+ 25 C
+ 85 C
- 55 C
IP3 (dBm)
FREQUENCY (GHz)
Input IP3 vs. LO Drive *
Input IP2 vs. LO Drive *
40
45
50
55
60
65
70
26
28
30
32
34
36
38
40
+ 11 dBm
+ 13 dBm
+ 15 dBm
IP2 (dBm)
FREQUENCY (GHz)
Input IP3 vs.
Temperature @ LO = +13 dBm *
* Two-tone input power = -5 dBm each tone, 1 MHz spacing.
Input P1dB vs.
Temperature @ LO = +13 dBm
5
7
9
11
13
15
26
28
30
32
34
36
38
40
+ 25 C
+ 85 C
- 55 C
P1dB (dBm)
FREQUENCY (GHz)
nLO
mRF
0
1
2
3
4
0
xx
7
1
19
0
41
2
69
57
67
3
74
69
71
4
74
74
RF = 31 GHz @ -10 dBm
LO = 32 GHz @ +13 dBm
All values in dBc below IF output power level.
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MIXERS - CHIP
5
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
v01.0301
HMC329
Outline Drawing
(See Die Handling, Mounting, Bonding Note)
Absolute Maximum Ratings
RF / IF Input
+13 dBm
LO Drive
+27 dBm
IF DC Current
2 mA
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004".
3. TYPICAL BOND PAD IS .004" SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
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MIXERS - CHIP
5
MIC Assembly Techniques
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-sub-
strate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended
to minimize inductance on RF, LO & IF ports.
HMC329
v01.0301
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
3 mil Ribbon Bond
3 mil Ribbon Bond
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MIXERS - CHIP
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GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC329
v01.0301
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-
60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with
a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A
minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than
12 mils (0.31 mm).
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