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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - CHIP
7
HMC347
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v02.0404
General Description
Features
Functional Diagram
The HMC347 is a broadband non-refl ective GaAs
MESFET SPDT MMIC chip. Covering DC to
20 GHz, the switch offers high isolation and low
insertion loss. The switch features over 50 dB
isolation at lower frequencies and over 40 dB at
higher frequencies due to the implementation of
on-chip via hole structures. The switch operates
using two negative control voltage logic lines of
-5/0V, requires no Vee and has no current con-
sumption. The switch operates down to DC. The
chip features coplanar I/Os that allow 100% RF
testing prior to delivery to the customer.
High Isolation: >40 dB @ 20 GHz
Low Insertion Loss: 1.6 dB @ 20 GHz
Non-Refl ective Design
Small Size: 0.8 mm x 1.3 mm x 0.1 mm
Electrical Specifi cations,
T
A
= +25 C, With 0/-5V Control, 50 Ohm System
Typical Applications
This switch is suitable DC - 20 GHz applications:
Fiber Optics
Microwave Radio
Military
Space
VSAT
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 20.0 GHz
1.7
2.2
dB
Isolation
DC - 20.0 GHz
40
45
dB
Return Loss
"On State"
DC - 20.0 GHz
10
13
dB
Return Loss RF1, RF2
"On State"
DC - 20.0 GHz
8
10
dB
Input Power for 1 dB Compression
0.5 - 20.0 GHz
19
23
dBm
Input Third Order Intercept
0.5 - 20.0 GHz
38
43
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 20.0 GHz
3
6
ns
ns
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7
SWITCHES - CHIP
-5
-4
-3
-2
-1
0
0
5
10
15
20
25
+25C
-55C
+85C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
15
20
25
RF1
RF2
ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
5
10
15
20
25
RFC
RF1,2 On
RF1,2 Off
RETURN LOSS (dB)
FREQUENCY (GHz)
10
15
20
25
30
0
5
10
15
20
1 dB Compression Point
0.1 dB Compression Point
INPUT P1dB (dBm)
FREQUENCY (GHz)
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
20
+25C
-55C
+85C
INPUT IP3 (dBm)
RF FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC347
Input Third Order Intercept Point
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v02.0404
Return Loss
0.1 and 1 dB Input Compression Point
Insertion Loss
Isolation
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SWITCHES - CHIP
7
Truth Table
Absolute Maximum Ratings
Control Voltages
HMC347
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v02.0404
Pad Locations & Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE 0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Control Input
Signal Path State
A
B
RFC to RF1
RFC to RF2
High
Low
ON
OFF
Low
High
OFF
ON
State
Bias Condition
Low
0 to -0.2V @ 10 uA Max.
High
-5V @ 10 uA Typ. to -7V @ 40 uA Max.
RF Input Power (Vctl = -5V)
+27 dBm
Control Voltage Range (A & B)
+0.5V to -7.5 Vdc
Channel Temperature
150 C
Thermal Resistance
(Insertion Loss Path)
440 C/W
Thermal Resistance
(Terminated Path)
540 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
SWITCHES - CHIP
Pad Number
Function
Description
Interface Schematic
1, 4, 7
RFC, RF1, RF2
This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are
required if the RF line potential is not equal to 0V.
2, 5, 8, 10
CTRLA
See truth table and control voltage table.
3, 6, 9
CTRLB
See truth table and control voltage table.
GND
Die bottom must be connected to RF ground.
HMC347
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v02.0404
Pad Descriptions
Suggested Driver Circuit
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SWITCHES - CHIP
7
HMC347
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v02.0404
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Assembly Diagram
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