MICROWAVE CORPORATION
3 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
FREQ.
DIVIDERS - CHIP
HMC365
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
General Description
Features
Functional Diagram
The HMC365 is a low noise Divide-by-4 Static
Divider with InGaP GaAs HBT technology that
has a small size of 0.686 mm x 1.295 mm. This
device operates from DC (with a square wave
input) to 13 GHz input frequency with a single
+5.0V DC supply. The low additive SSB phase
noise of -151 dBc/Hz at 100 kHz offset helps the
user maintain good system noise performance.
Ultra Low SSB Phase Noise: -151 dBc/Hz
Wide Bandwidth
Output Power: 5 dBm
Single DC Supply: +5V
Small Size: 0.686 mm x 1.295 mm
Electrical Specifi cations,
T
A
= +25 C, 50 Ohm System, Vcc = 5V
Typical Applications
Prescaler for DC to Ku Band PLL Applications:
Satellite Communication Systems
Fiber Optic
Pt-Pt and Pt-MPt Radios
VSAT
1. Divider will operate down to DC for square-wave input signal.
2. When operated in high power mode (pin 10 connected to ground).
v03.0404
Parameter
Conditions
Min.
Typ.
Max.
Units
Maximum Input Frequency
13
14
GHz
Minimum Input Frequency
Sine Wave Input. [1]
0.2
0.5
GHz
Input Power Range
Fin = 1 to 10 GHz
-15
>-20
+10
dBm
Fin = 10 to 12 GHz
-10
>-15
+3
dBm
Fin = 12 to 13 GHz
-5
>-8
+3
dBm
Output Power [2]
Fin = 13 GHz
2
5
dBm
Reverse Leakage
Both RF Outputs Terminated
45
dB
SSB Phase Noise (100 kHz offset)
Pin = 0 dBm, Fin = 6 GHz
-151
dBc/Hz
Output Transition Time
Pin = 0 dBm, Fout = 882 MHz
100
ps
Supply Current (Icc) [2]
110
mA
MICROWAVE CORPORATION
3 - 27
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
FREQ.
DIVIDERS - CHIP
-30
-20
-10
0
10
20
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
INPUT POWER (dBm)
INPUT FREQUENCY (GHz)
-30
-20
-10
0
10
20
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Min Pin +25 C
Max Pin +25 C
Min Pin +85 C
Max Pin +85 C
Min Pin -55 C
Max Pin -55 C
INPUT POWER (dBm)
INPUT FREQUENCY (GHz)
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
+25 C
+85 C
-55 C
OUTPUT POWER (dBm)
INPUT FREQUENCY (GHz)
-160
-140
-120
-100
-80
-60
-40
-20
0
10
2
10
3
10
4
10
5
10
6
10
7
SSB PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC365
SSB Phase Noise
Performance, Pin= 0 dBm, T= 25 C
Input Sensitivity Window, T= 25 C
Input Sensitivity Window vs. Temperature
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
Output Power vs. Temperature
Recommended
Operating Window
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Pfeedthru
2nd Harmonic
3rd Harmonic
OUTPUT LEVEL (dBm)
INPUT FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Both Output Ports Terminated
One Output Port Terminated
POWER LEVEL (dBm)
INPUT FREQUENCY (GHz)
Reverse Leakage, Pin= 0 dBm, T= 25 C
Output Harmonic
Content, Pin= 0 dBm, T= 25 C
v03.0404
MICROWAVE CORPORATION
3 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
FREQ.
DIVIDERS - CHIP
-700
-600
-500
-400
-300
-200
-100
0
100
200
300
400
500
600
700
22.7 22.9 23.1 23.3 23.5 23.7 23.9 24.1 24.3 24.5 24.7
AMPLITUDE (mV)
TIME (nS)
Output Voltage Waveform,
Pin= 0 dBm, Fout= 882 MHz, T= 25 C
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
HMC365
Absolute Maximum Ratings
Outline Drawing
Typical Supply Current vs. Vcc
Note: Divider will operate over full voltage range shown above
v03.0404
RF Input (Vcc = +5V)
+13 dBm
Vcc
+5.5V
VLogic
Vcc -1.6V to Vcc -1.2V
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vcc (V)
Icc (mA)
4.75
94
5.0
110
5.25
118
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE 0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
MICROWAVE CORPORATION
3 - 29
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
FREQ.
DIVIDERS - CHIP
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
HMC365
v03.0404
Pad Description
Pad Number
Function
Description
Interface Schematic
1
IN
RF Input 180 out of phase with pad 3 for differential operation.
AC ground for single ended operation.
2
N/C
Not Connected
4, 5, 6
VCC
Supply Voltage 5V 0.25V can be applied to pad 4, 5, or 6.
3
IN
RF Input must be DC blocked.
7, 11, 12
GND
Ground: These pads are grounded.
8
OUT
Divided Output
9
OUT
Divided output 180 out of phase with pad 8.
MICROWAVE CORPORATION
3 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
FREQ.
DIVIDERS - CHIP
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
HMC365
Truth Table
v03.0404
Function
Pin
5V
GND
Float
DISABLE
14
Output Off
Output On
X
PWR
DWN
13
Power
Down
Power Up
X
PWR
SEL
10
X
High
Power Output
Low
Power Output
X = State not permitted.
Pad Number
Function
Description
Interface Schematic
10
PWR SEL
In the low power mode, the power select pin is left fl oating.
By grounding this pin, the output power is increased by
approximately 6 dB.
13
PWR DWN
The power down pin is grounded for normal operation.
Applying 5 volts to this pin will power down this device.
14
DISABLE
The disable pin is grounded for normal operation.
Applying 5 volts to this pin will disable the input buffer amplifi er.
Pad Description
(continued)
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