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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v00.0904
General Description
Features
Functional Diagram
The HMC457QS16G is a high dynamic range
GaAs InGaP Heterojunction Bipolar Transistor
(HBT) 1 watt MMIC power amplifi
er operating
between 1.7 and 2.2 GHz. Packaged in a miniature
16 lead QSOP plastic package, the amplifi er gain
is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the amplifi er output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE makes
the HMC457QS16G an ideal power amplifi er for
Cellular/3G base station & repeater applications.
Output IP3: +46 dBm
Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
+25 dBm W-CDMA Channel Power
@ -50 dBc ACPR
Integrated Power Control (Vpd)
QSOP16G SMT Package: 29.4 mm
2
Electrical Specifi cations,
T
A
= +25C, Vs= +5V, Vpd = +5V, Vbias = +5V (note 1)
Typical Applications
The HMC457QS16G is ideal for applications requiring
a high dynamic range amplifi er:
CDMA & W-CDMA
GSM, GPRS & Edge
Base Stations & Repeaters
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1710 - 1990
2010 - 2170
MHz
Gain
24
27
22
25
dB
Gain Variation Over Temperature
0.025
0.035
0.025
0.035
dB / C
Input Return Loss
11
11
dB
Output Return Loss
8
5
dB
Output Power for 1dB Compression (P1dB)
26
29
27.5
30.5
dBm
Saturated Output Power (Psat)
32.5
32
dBm
Output Third Order Intercept (IP3) (note 2)
42
45
42
45
dBm
Noise Figure
6
5
dB
Supply Current (Icq)
500
500
mA
Control Current (Ipd)
4
4
mA
Bias Current (Vbias)
10
10
mA
Note 1: Specifi cations and data refl ect HMC457QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC457QS16G
Input Return Loss
vs. Temperature @ 1900 MHz
Output Return Loss
vs. Temperature @ 1900 MHz
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v00.0904
Broadband Gain
& Return Loss @ 1900 MHz
Gain vs. Temperature @ 1900 MHz
-20
-15
-10
-5
0
5
10
15
20
25
30
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
1.6
1.65
1.7
1.75
1.8
1.85
1.9
1.95
2
2.05
2.1
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
1.6
1.65
1.7
1.75
1.8
1.85
1.9
1.95
2
2.05
2.1
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-15
-12
-9
-6
-3
0
1.6
1.65
1.7
1.75
1.8
1.85
1.9
1.95
2
2.05
2.1
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
PldB vs. Temperature @ 1900 MHz
Psat vs. Temperature @ 1900 MHz
20
22
24
26
28
30
32
34
1.6
1.65
1.7
1.75
1.8
1.85
1.9
1.95
2
2.05
2.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
1.6
1.65
1.7
1.75
1.8
1.85
1.9
1.95
2
2.05
2.1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v00.0904
Output IP3 vs. Temperature @ 1900 MHz
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
Power Compression @ 1900 MHz
* Icq is controlled by varying Vpd.
Noise Figure vs.
Temperature @ 1900 MHz
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
34
36
38
40
42
44
46
48
50
1.6
1.65
1.7
1.75
1.8
1.85
1.9
1.95
2
2.05
2.1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
1.6
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
440
480
520
560
600
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Icq (mA)
5V
-90
-80
-70
-60
-50
-40
-30
12
14
16
18
20
22
24
26
28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
5.5V
4.5V
0
5
10
15
20
25
30
35
40
45
50
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v00.0904
Gain vs. Temperature @ 2100 MHz
Output Return Loss
vs. Temperature @ 2100 MHz
Input Return Loss
vs. Temperature @ 2100 MHz
Broadband Gain
and Return Loss @ 2100 MHz
-20
-15
-10
-5
0
5
10
15
20
25
30
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
S11
S21
S22
RESPONSE (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
Psat vs. Temperature @ 2100 MHz
PldB vs. Temperature @ 2100 MHz
20
22
24
26
28
30
32
34
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v00.0904
Output IP3
vs. Temperature @ 2100 MHz
Gain, Power & IP3
vs. Supply Current @ 2100 MHz*
Gain, Power & IP3
vs. Supply Voltage @ 2100 MHz
Noise Figure
vs. Temperature @ 2100 MHz
0
1
2
3
4
5
6
7
8
9
10
1.9
2
2.1
2.2
2.3
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
440
480
520
560
600
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Icq (mA)
*Icq is controlled by varying Vpd
Power Compression @ 2100 MHz
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
12
14
16
18
20
22
24
26
28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
W-CDMA
Frequency: 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
5V
4.5V
5.5V
0
5
10
15
20
25
30
35
40
45
50
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
34
36
38
40
42
44
46
48
50
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
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