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Электронный компонент: HMC473MS8

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MICROWAVE CORPORATION
9 - 110
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
TTENU
A
T
ORS - SMT
9
HMC473MS8
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
v00.1103
General Description
Features
Functional Diagram
Single Positive Voltage Control: 0 to +3V
High Attenuation Range: 48 dB @ 0.9 GHz
High P1dB Compression Point: +15 dBm
Ultra Small Package: MSOP8
Replaces HMC173MS8
Electrical Specifi cations,
T
A
= +25 C, Vdd = +3.3 Vdc, 50 Ohm System
Typical Applications
The HMC473MS8 is an absorptive voltage
variable attenuator in an 8-lead MSOP package.
The device operates with a +3.3V supply voltage
and a 0 to +3V control voltage. Unique features
include a high dynamic attenuation range of up to
48 dB and excellent power handling performance
through all attenuation states. The HMC473MS8
is ideal for operation in wireless applications from
0.45 to 1.6 GHz. Operation from 1.7 to 2.2 GHz is
possible with a reduced maximum attenuation of 29
to 32 dB. The HMC473MS8 can be used with an
external driver circuit for improved control voltage
linearity vs. attenuation.
The HMC473MS8 is ideal for:
Cellular, UMTS/3G Infrastructure
Portable Wireless
GPS
Parameter
Min.
Typ.
Max.
Units
Insertion Loss (Min. Atten.)
(Vctl = 0.0 Vdc)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
1.8
1.9
2.4
2.8
3.0
2.2
2.3
2.9
3.3
3.5
dB
dB
dB
dB
dB
Attenuation Range
(Vctl = 0 to +3 V)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
34
43
32
27
24
39
48
37
32
29
dB
dB
dB
dB
dB
Return Loss
(Vctl = 0 to +3 V)
0.45 - 0.8 GHz
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
2.0 - 2.2 GHz
15
14
11
10
9
dB
dB
dB
Input Power for 0.1 dB Compression
(0.9 GHz)
Min Atten.
Atten. >2.0
20
5.5
dBm
dBm
Input Power for 1.0 dB Compression
(0.9 GHz)
Min Atten.
Atten. >2.0
24
11
28
15
dBm
dBm
Input Third Order Intercept
(0.9 GHz, Two-tone Input Power = +5.0 dBm Each Tone)
Min Atten.
Atten. >2.0
47
20
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.45 - 2.2 GHz
1.3
1.5
S
S
MICROWAVE CORPORATION
9 - 111
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
TTENU
A
T
ORS - SMT
9
HMC473MS8
v00.1103
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
Insertion Loss vs. Temperature
Input IP3 vs. Control Voltage @ 0.9 GHz
Input IP3 vs. Control Voltage @ 1.9 GHz
-5
-4
-3
-2
-1
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
+25 C
+85 C
-40 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
15
20
25
30
35
40
45
50
55
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
INPUT IP3 (dBm)
CONTROL VOLTAGE (V)
15
20
25
30
35
40
45
50
55
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
INPUT IP3 (dBm)
CONTROL VOLTAGE (V)
Input IP3 vs. Control Voltage @ 2.1 GHz
15
20
25
30
35
40
45
50
55
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
INPUT IP3 (dBm)
CONTROL VOLTAGE (V)
15
20
25
30
35
40
45
50
55
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
INPUT IP3 (dBm)
CONTROL VOLTAGE (V)
Input IP3 vs. Control Voltage @ 0.45 GHz
Return Loss vs. Control Voltage
-25
-20
-15
-10
-5
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 V
1.0 V
1.8 V
2.0 V
3.0 V
RETURN LOSS (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
9 - 112
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
TTENU
A
T
ORS - SMT
9
HMC473MS8
v00.1103
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
Relative Attenuation vs.
Control Voltage @ 0.9 GHz
Relative Attenuation vs.
Control Voltage @ 1.9 GHz
Return Loss vs.
Control Voltage @ 0.9 GHz
Return Loss vs.
Control Voltage @ 1.9 GHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
ATTENUATI
ON (dB)
CONTROL VOLTAGE (V)
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
- 40 C
ATTENUATI
ON (dB)
CONTROL VOLTAGE (V)
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85C
-40 C
RETURN LOSS (dB)
CONTROL VOLTAGE (V)
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
RETURN LOSS (dB)
CONTROL VOLTAGE (V)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
ATTENUATI
ON (dB)
CONTROL VOLTAGE (V)
Relative Attenuation vs.
Control Voltage @ 0.45 GHz
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
RETURN LOSS (dB)
CONTROL VOLTAGE (V)
Return Loss vs.
Control Voltage @ 0.45 GHz
MICROWAVE CORPORATION
9 - 113
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
TTENU
A
T
ORS - SMT
9
v00.1103
Control and Bias Voltage
HMC473MS8
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
Absolute Maximum Ratings
V
CTL
-0.2 Vdc to Vdd
Vdd
+8 Vdc
Maximum Input Power
Vdd = +3.3 Vdc
+29 dBm
+21 dBm
Min. Atten.
Attenuation >2 dB
Channel Temperature (Tc)
150 C
Thermal Resistance (R
TH
)
(junction to lead)
92 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
V
CTL
0 to +3 Vdc @ 1 A
Vdd
+3.3 Vdc +/- 0.1 Vdc @ 10 A
Relative Attenuation vs.
Control Voltage @ 2.1 GHz
Return Loss vs.
Control Voltage @ 2.1 GHz
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
ATTENUATI
ON (dB)
CONTROL VOLTAGE (V)
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
RETURN LOSS (dB)
CONTROL VOLTAGE (V)
Worse Case Input P1dB vs. Temperature
5
10
15
20
25
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
+25 C
+85 C
-40 C
INPUT P1dB (dBm)
FREQUENCY (GHz)
Relative Attenuation vs. Control Voltage
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
1.0 V
1.5 V
1.6V
1.7 V
1.8 V
2.0 V
3.0 V
ATTENUATI
ON (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
9 - 114
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
TTENU
A
T
ORS - SMT
9
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 8
RF1, RF2
These pins are DC coupled and matched to 50 Ohms.
DC blocking capacitors are required. 330pF capacitors are
supplied on evaluation board.
2, 7
GND
Pins must connect to RF ground.
3
Vctl
Control voltage
4, 5
N/C
No Connection. These pins may be connected to RF ground.
Performance will not be affected.
6
Vdd
Supply Voltage.
v00.1103
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.45 - 2.2 GHz
HMC473MS8
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.